BDY57 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BDY57
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 175 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 25 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar BDY57

BDY57 Datasheet (PDF)

..1. Size:153K comset
bdy57 bdy58.pdf

BDY57 BDY58NPN SILICON TRANSISTORS, DIFFUSED MESANPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY57 80VCEO Collector-Emitter Voltage VBDY58 125BDY57 120VCBO Collector-Base Voltage VBDY58 160BDY57VEBO Emitter-Base Voltage 10 VBDY58BDY57IC Collector Current

..2. Size:207K inchange semiconductor
bdy57.pdf

isc Silicon NPN Power Transistor BDY57DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLF signal power amplification.High current fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

..3. Size:117K inchange semiconductor
bdy57 bdy58.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rati

0.1. Size:203K comset
bdy57-bdy58.pdf