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BDY57 Specs and Replacement

Type Designator: BDY57

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

 BDY57 Substitution

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BDY57 datasheet

 ..1. Size:153K  comset

bdy57 bdy58.pdf pdf_icon

BDY57

BDY57 BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY57 80 VCEO Collector-Emitter Voltage V BDY58 125 BDY57 120 VCBO Collector-Base Voltage V BDY58 160 BDY57 VEBO Emitter-Base Voltage 10 V BDY58 BDY57 IC Collector Current... See More ⇒

 ..2. Size:207K  inchange semiconductor

bdy57.pdf pdf_icon

BDY57

isc Silicon NPN Power Transistor BDY57 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS LF signal power amplification. High current fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

 ..3. Size:117K  inchange semiconductor

bdy57 bdy58.pdf pdf_icon

BDY57

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rati... See More ⇒

 0.1. Size:203K  comset

bdy57-bdy58.pdf pdf_icon

BDY57

BDY57 BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY57 80 VCEO Collector-Emitter Voltage V BDY58 125 BDY57 120 VCBO Collector-Base Voltage V BDY58 160 BDY57 VEBO Emitter-Base Voltage 10 V BDY58 BDY57 IC Collector Current... See More ⇒

Detailed specifications: BDY48-200 , BDY48-300 , BDY48-400 , BDY49 , BDY53 , BDY54 , BDY55 , BDY56 , 2SA1015 , BDY57A , BDY58 , BDY58R , BDY60 , BDY60A , BDY60B , BDY61 , BDY62 .

History: 2SC383TM | BDY44 | BDX94 | BDY75

Keywords - BDY57 pdf specs

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History: 2SC383TM | BDY44 | BDX94 | BDY75

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