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BDY57A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BDY57A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 175 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 25 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO3

 Búsqueda de reemplazo de transistor bipolar BDY57A

 

BDY57A Datasheet (PDF)

 9.1. Size:203K  comset
bdy57-bdy58.pdf

BDY57A
BDY57A

BDY57 BDY58NPN SILICON TRANSISTORS, DIFFUSED MESANPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY57 80VCEO Collector-Emitter Voltage VBDY58 125BDY57 120VCBO Collector-Base Voltage VBDY58 160BDY57VEBO Emitter-Base Voltage 10 VBDY58BDY57IC Collector Current

 9.2. Size:153K  comset
bdy57 bdy58.pdf

BDY57A
BDY57A

BDY57 BDY58NPN SILICON TRANSISTORS, DIFFUSED MESANPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY57 80VCEO Collector-Emitter Voltage VBDY58 125BDY57 120VCBO Collector-Base Voltage VBDY58 160BDY57VEBO Emitter-Base Voltage 10 VBDY58BDY57IC Collector Current

 9.3. Size:207K  inchange semiconductor
bdy57.pdf

BDY57A
BDY57A

isc Silicon NPN Power Transistor BDY57DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLF signal power amplification.High current fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.4. Size:117K  inchange semiconductor
bdy57 bdy58.pdf

BDY57A
BDY57A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rati

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 15C01SS-TL-E | 2N1190

 

 
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History: 15C01SS-TL-E | 2N1190

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