BDY57A - описание и поиск аналогов

BDY57 BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY57 80 VCEO Collector-Emitter Voltage V BDY58 125 BDY57 120 VCBO Collector-Base Voltage V BDY58 160 BDY57 VEBO Emitter-Base Voltage 10 V BDY58 BDY57 IC Collector Current

BDY57 BDY58 NPN SILICON TRANSISTORS, DIFFUSED MESA NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY57 80 VCEO Collector-Emitter Voltage V BDY58 125 BDY57 120 VCBO Collector-Base Voltage V BDY58 160 BDY57 VEBO Emitter-Base Voltage 10 V BDY58 BDY57 IC Collector Current

isc Silicon NPN Power Transistor BDY57 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS LF signal power amplification. High current fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rati