All Transistors. BDY57A Datasheet

 

BDY57A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDY57A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3

 BDY57A Transistor Equivalent Substitute - Cross-Reference Search

   

BDY57A Datasheet (PDF)

 9.1. Size:203K  comset
bdy57-bdy58.pdf

BDY57A
BDY57A

BDY57 BDY58NPN SILICON TRANSISTORS, DIFFUSED MESANPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY57 80VCEO Collector-Emitter Voltage VBDY58 125BDY57 120VCBO Collector-Base Voltage VBDY58 160BDY57VEBO Emitter-Base Voltage 10 VBDY58BDY57IC Collector Current

 9.2. Size:153K  comset
bdy57 bdy58.pdf

BDY57A
BDY57A

BDY57 BDY58NPN SILICON TRANSISTORS, DIFFUSED MESANPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY57 80VCEO Collector-Emitter Voltage VBDY58 125BDY57 120VCBO Collector-Base Voltage VBDY58 160BDY57VEBO Emitter-Base Voltage 10 VBDY58BDY57IC Collector Current

 9.3. Size:207K  inchange semiconductor
bdy57.pdf

BDY57A
BDY57A

isc Silicon NPN Power Transistor BDY57DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLF signal power amplification.High current fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.4. Size:117K  inchange semiconductor
bdy57 bdy58.pdf

BDY57A
BDY57A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rati

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC5380

 

 
Back to Top