All Transistors. BDY57A Datasheet

 

BDY57A Datasheet and Replacement


   Type Designator: BDY57A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO3
 

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BDY57A Datasheet (PDF)

 9.1. Size:203K  comset
 bdy57-bdy58.pdf pdf_icon

BDY57A

BDY57 BDY58NPN SILICON TRANSISTORS, DIFFUSED MESANPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY57 80VCEO Collector-Emitter Voltage VBDY58 125BDY57 120VCBO Collector-Base Voltage VBDY58 160BDY57VEBO Emitter-Base Voltage 10 VBDY58BDY57IC Collector Current

 9.2. Size:153K  comset
 bdy57 bdy58.pdf pdf_icon

BDY57A

BDY57 BDY58NPN SILICON TRANSISTORS, DIFFUSED MESANPN SILICON TRANSISTORS, DIFFUSED MESALF Large Signal Power AmplificationHigh Current Fast SwitchingABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDY57 80VCEO Collector-Emitter Voltage VBDY58 125BDY57 120VCBO Collector-Base Voltage VBDY58 160BDY57VEBO Emitter-Base Voltage 10 VBDY58BDY57IC Collector Current

 9.3. Size:207K  inchange semiconductor
 bdy57.pdf pdf_icon

BDY57A

isc Silicon NPN Power Transistor BDY57DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High Power DissipationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLF signal power amplification.High current fast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 9.4. Size:117K  inchange semiconductor
 bdy57 bdy58.pdf pdf_icon

BDY57A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum rati

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Datasheet: BDY48-300 , BDY48-400 , BDY49 , BDY53 , BDY54 , BDY55 , BDY56 , BDY57 , BC639 , BDY58 , BDY58R , BDY60 , BDY60A , BDY60B , BDY61 , BDY62 , BDY63 .

History: 3CD6 | DTD113Z | S2121

Keywords - BDY57A transistor datasheet

 BDY57A cross reference
 BDY57A equivalent finder
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