BDY90A. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

BDY90A datasheet

..1. Size:207K inchange semiconductor
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isc Silicon NPN Power Transistor BDY90A DESCRIPTION High Current Capability Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in converters, inverters, switching regulators and switching control amplifiers. ABSOLUTE MAXIMUM RATI

9.1. Size:62K st
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BDY90P NPN SILICON POWER TRANSISTOR NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATION VOLTAGE FAST-SWITCHING SPEED APPLICATION GENERAL PURPOSE SWITCHING APPLICATIONS GENERAL PURPOSE AMPLIFIERS 3 2 DC CURRENT AND BATTERY OPERATED 1 ELECTRONIC BALLAST TO-220 DESCRIPTION The BDY90P is a silicon multiepitaxial planar NPN power transistors in TO-220 case intented for use in

9.2. Size:62K st
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BDY90 HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDY90 is a silicon epitaxial planar NPN 1 power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear 2 applications in military and industrial equipment. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIM

9.3. Size:11K semelab
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BDY90S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in