BDY90A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BDY90A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar BDY90A
BDY90A Datasheet (PDF)
bdy90a.pdf
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isc Silicon NPN Power Transistor BDY90ADESCRIPTIONHigh Current CapabilityCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators and switching control amplifiers.ABSOLUTE MAXIMUM RATI
bdy90p.pdf
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BDY90PNPN SILICON POWER TRANSISTOR NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATIONVOLTAGE FAST-SWITCHING SPEEDAPPLICATION GENERAL PURPOSE SWITCHINGAPPLICATIONS GENERAL PURPOSE AMPLIFIERS 32 DC CURRENT AND BATTERY OPERATED1ELECTRONIC BALLAST TO-220DESCRIPTION The BDY90P is a silicon multiepitaxial planarNPN power transistors in TO-220 case intentedfor use in
bdy90.pdf
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BDY90HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTION The BDY90 is a silicon epitaxial planar NPN1power transistors in Jedec TO-3 metal case. Theyare intented for use in switching and linear 2applications in military and industrial equipment.TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIM
bdy90s.pdf
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BDY90SDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
bdy90.pdf
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isc Silicon NPN Power Transistor BDY90DESCRIPTIONHigh DC Current Gain-: h = 30-120@I = 5AFE CExcellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching-control amplifiers, powergates,switching regulators, converters, and inverters.ABSOLUTE MAXIMUM
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .