BDY90A pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDY90A Specs and Replacement

Type Designator: BDY90A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO3

BDY90A Substitution

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BDY90A datasheet

..1. Size:207K inchange semiconductor

bdy90a.pdf pdf_icon

isc Silicon NPN Power Transistor BDY90A DESCRIPTION High Current Capability Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in converters, inverters, switching regulators and switching control amplifiers. ABSOLUTE MAXIMUM RATI... See More ⇒

9.1. Size:62K st

bdy90p.pdf pdf_icon

BDY90P NPN SILICON POWER TRANSISTOR NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATION VOLTAGE FAST-SWITCHING SPEED APPLICATION GENERAL PURPOSE SWITCHING APPLICATIONS GENERAL PURPOSE AMPLIFIERS 3 2 DC CURRENT AND BATTERY OPERATED 1 ELECTRONIC BALLAST TO-220 DESCRIPTION The BDY90P is a silicon multiepitaxial planar NPN power transistors in TO-220 case intented for use in ... See More ⇒

9.2. Size:62K st

bdy90.pdf pdf_icon

BDY90 HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDY90 is a silicon epitaxial planar NPN 1 power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear 2 applications in military and industrial equipment. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIM... See More ⇒

9.3. Size:11K semelab

bdy90s.pdf pdf_icon

BDY90S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ... See More ⇒