BDY90A Datasheet, Equivalent, Cross Reference Search
Type Designator: BDY90A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
BDY90A Transistor Equivalent Substitute - Cross-Reference Search
BDY90A Datasheet (PDF)
bdy90a.pdf
isc Silicon NPN Power Transistor BDY90ADESCRIPTIONHigh Current CapabilityCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators and switching control amplifiers.ABSOLUTE MAXIMUM RATI
bdy90p.pdf
BDY90PNPN SILICON POWER TRANSISTOR NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATIONVOLTAGE FAST-SWITCHING SPEEDAPPLICATION GENERAL PURPOSE SWITCHINGAPPLICATIONS GENERAL PURPOSE AMPLIFIERS 32 DC CURRENT AND BATTERY OPERATED1ELECTRONIC BALLAST TO-220DESCRIPTION The BDY90P is a silicon multiepitaxial planarNPN power transistors in TO-220 case intentedfor use in
bdy90.pdf
BDY90HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPEAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTION The BDY90 is a silicon epitaxial planar NPN1power transistors in Jedec TO-3 metal case. Theyare intented for use in switching and linear 2applications in military and industrial equipment.TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIM
bdy90s.pdf
BDY90SDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
bdy90.pdf
isc Silicon NPN Power Transistor BDY90DESCRIPTIONHigh DC Current Gain-: h = 30-120@I = 5AFE CExcellent Safe Operating AreaHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching-control amplifiers, powergates,switching regulators, converters, and inverters.ABSOLUTE MAXIMUM
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
