BDY90A - описание и поиск аналогов

isc Silicon NPN Power Transistor BDY90A DESCRIPTION High Current Capability Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in converters, inverters, switching regulators and switching control amplifiers. ABSOLUTE MAXIMUM RATI

BDY90P NPN SILICON POWER TRANSISTOR NPN TRANSISTOR LOW COLLECTOR EMITTER SATURATION VOLTAGE FAST-SWITCHING SPEED APPLICATION GENERAL PURPOSE SWITCHING APPLICATIONS GENERAL PURPOSE AMPLIFIERS 3 2 DC CURRENT AND BATTERY OPERATED 1 ELECTRONIC BALLAST TO-220 DESCRIPTION The BDY90P is a silicon multiepitaxial planar NPN power transistors in TO-220 case intented for use in

BDY90 HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BDY90 is a silicon epitaxial planar NPN 1 power transistors in Jedec TO-3 metal case. They are intented for use in switching and linear 2 applications in military and industrial equipment. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIM

BDY90S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

isc Silicon NPN Power Transistor BDY90 DESCRIPTION High DC Current Gain- h = 30-120@I = 5A FE C Excellent Safe Operating Area High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching-control amplifiers, power gates,switching regulators, converters, and inverters. ABSOLUTE MAXIMUM