BF441 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BF441 📄📄

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.025 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 125 MHz

Capacitancia de salida (Cc): 0.8 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO92

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BF441 datasheet

0.1. Size:292K motorola
mmbf4416lt1rev0d.pdf pdf_icon

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF4416LT1/D JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318 08, STYLE 10 Drain Source Voltage VDS 30 Vdc SOT 23 (TO 236AB) Drain Gate Voltage VDG 30 Vdc Gate Source Voltage VGS 30 Vdc

0.2. Size:69K philips
pmbf4416 pmbf4416a cnv 2.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A FEATURES Low noise Interchangeability of drain and source connections High gain. 3 handbook, halfpage DESC

0.3. Size:49K fairchild semi
mmbf4416a.pdf pdf_icon

March 2005 MMBF4416A N-Channel RF Amplifier This device is designed for RF amplifiers. Sourced from process 50. G S SOT-23 D Mark 6BG Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage -35 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range - 5

0.4. Size:100K fairchild semi
mmbf4416.pdf pdf_icon

April 2009 MMBF4416 N-Channel RF Amplifiers This device is designed for RF amplifiers. G Sourced from process 50. S SOT-23 D Mark 6A Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA TJ, TSTG Junction and Storage Temperature Range -55 to +150 C

Otros transistores... BF432, BF432L, BF433, BF435, BF436, BF437, BF439, BF440, A1015, BF450, BF451, BF454, BF454B, BF455, BF455C, BF455D, BF456

BF441 Datasheet. Equivalente