BF441 Datasheet. Specs and Replacement

Type Designator: BF441  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Collector Capacitance (Cc): 0.8 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO92

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BF441 datasheet

 0.1. Size:292K  motorola

 mmbf4416lt1rev0d.pdf pdf_icon

BF441

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF4416LT1/D JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318 08, STYLE 10 Drain Source Voltage VDS 30 Vdc SOT 23 (TO 236AB) Drain Gate Voltage VDG 30 Vdc Gate Source Voltage VGS 30 Vdc ... See More ⇒

 0.2. Size:69K  philips

 pmbf4416 pmbf4416a cnv 2.pdf pdf_icon

BF441

DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A FEATURES Low noise Interchangeability of drain and source connections High gain. 3 handbook, halfpage DESC... See More ⇒

 0.3. Size:49K  fairchild semi

 mmbf4416a.pdf pdf_icon

BF441

March 2005 MMBF4416A N-Channel RF Amplifier This device is designed for RF amplifiers. Sourced from process 50. G S SOT-23 D Mark 6BG Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage -35 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range - 5... See More ⇒

 0.4. Size:100K  fairchild semi

 mmbf4416.pdf pdf_icon

BF441

April 2009 MMBF4416 N-Channel RF Amplifiers This device is designed for RF amplifiers. G Sourced from process 50. S SOT-23 D Mark 6A Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA TJ, TSTG Junction and Storage Temperature Range -55 to +150 C ... See More ⇒

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Detailed specifications: BF432, BF432L, BF433, BF435, BF436, BF437, BF439, BF440, A1015, BF450, BF451, BF454, BF454B, BF455, BF455C, BF455D, BF456

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