BFG67X . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFG67X
Código: V12
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 10 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7500 MHz
Capacitancia de salida (Cc): 0.5 pF
Ganancia de corriente contínua (hfe): 45
Paquete / Cubierta: TO251
Búsqueda de reemplazo de transistor bipolar BFG67X
BFG67X Datasheet (PDF)
bfg67 bfg67x bfg67xr 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG67; BFG67/X; BFG67/XRNPN 8 GHz wideband transistors1998 Oct 02Product specificationSupersedes data of September 1995Philips Semiconductors Product specificationNPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XRFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG67 BFG67/X BFG67/XR High transition freq
bfg67x.pdf
SMD Type TransistorsNPN TransistorsBFG67X (KFG67X)SOT-143 Unit:mm2.900.1 1.300.1X Features Collector Current Capability IC=50mA0~0.1 Collector Emitter Voltage VCEO=10V2.300.21.90 (Typ) 0.48 (max) High power gain0.38 (min) 4 3 Low noise figure High transition frequency1 20.45 (max) 0.88 (max) 0.15 (min) detail X1.70 (Ty
bfg67w bfg67wx bfg67wxr 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG67WBFG67W/X; BFG67W/XRNPN 8 GHz wideband transistorAugust 1995Product specificationFile under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationBFG67WNPN 8 GHz wideband transistorBFG67W/X; BFG67W/XRFEATURES MARKING High power gainTYPE NUMBER CODE Low noise figureBFG67W V2f
bfg67 x xr n.pdf
BFG67; BFG67/X; BFG67/XRNPN 8 GHz wideband transistorsRev. 05 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links
bfg67r.pdf
SMD Type TransistorsNPN TransistorsBFG67R (KFG67R)Unit:mmSOT-143R2.900.1 1.300.1X Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=10V0~0.1 2.300.2 High power gain 1.90 (Typ) 0.48 (max) 0.38 (min) Low noise figure3 40.350.1 High transition frequency2 10.55 (max) 0.88 (max) 0.25 (min) detail
bfg67.pdf
SMD Type TransistorsNPN TransistorsBFG67 (KFG67)SOT-143 Unit:mm2.900.1 1.300.1X Features Collector Current Capability IC=50mA0~0.1 Collector Emitter Voltage VCEO=10V2.300.21.90 (Typ) 0.48 (max) High power gain0.38 (min) 4 3 Low noise figure High transition frequency1 20.45 (max) 0.88 (max) 0.15 (min) detail X1.70 (Typ)
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
