BFG67X Datasheet, Equivalent, Cross Reference Search
Type Designator: BFG67X
SMD Transistor Code: V12
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 7500 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO251
BFG67X Transistor Equivalent Substitute - Cross-Reference Search
BFG67X Datasheet (PDF)
bfg67 bfg67x bfg67xr 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG67; BFG67/X; BFG67/XRNPN 8 GHz wideband transistors1998 Oct 02Product specificationSupersedes data of September 1995Philips Semiconductors Product specificationNPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XRFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG67 BFG67/X BFG67/XR High transition freq
bfg67x.pdf
SMD Type TransistorsNPN TransistorsBFG67X (KFG67X)SOT-143 Unit:mm2.900.1 1.300.1X Features Collector Current Capability IC=50mA0~0.1 Collector Emitter Voltage VCEO=10V2.300.21.90 (Typ) 0.48 (max) High power gain0.38 (min) 4 3 Low noise figure High transition frequency1 20.45 (max) 0.88 (max) 0.15 (min) detail X1.70 (Ty
bfg67w bfg67wx bfg67wxr 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFG67WBFG67W/X; BFG67W/XRNPN 8 GHz wideband transistorAugust 1995Product specificationFile under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationBFG67WNPN 8 GHz wideband transistorBFG67W/X; BFG67W/XRFEATURES MARKING High power gainTYPE NUMBER CODE Low noise figureBFG67W V2f
bfg67 x xr n.pdf
BFG67; BFG67/X; BFG67/XRNPN 8 GHz wideband transistorsRev. 05 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links
bfg67r.pdf
SMD Type TransistorsNPN TransistorsBFG67R (KFG67R)Unit:mmSOT-143R2.900.1 1.300.1X Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=10V0~0.1 2.300.2 High power gain 1.90 (Typ) 0.48 (max) 0.38 (min) Low noise figure3 40.350.1 High transition frequency2 10.55 (max) 0.88 (max) 0.25 (min) detail
bfg67.pdf
SMD Type TransistorsNPN TransistorsBFG67 (KFG67)SOT-143 Unit:mm2.900.1 1.300.1X Features Collector Current Capability IC=50mA0~0.1 Collector Emitter Voltage VCEO=10V2.300.21.90 (Typ) 0.48 (max) High power gain0.38 (min) 4 3 Low noise figure High transition frequency1 20.45 (max) 0.88 (max) 0.15 (min) detail X1.70 (Typ)
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
