Биполярный транзистор BFG67X
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BFG67X
Маркировка: V12
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3
W
Макcимально допустимое напряжение коллектор-база (Ucb): 20
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10
V
Макcимальный постоянный ток коллектора (Ic): 0.05
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 7500
MHz
Ёмкость коллекторного перехода (Cc): 0.5
pf
Статический коэффициент передачи тока (hfe): 45
Корпус транзистора:
TO251
Аналоги (замена) для BFG67X
BFG67X
Datasheet (PDF)
..1. Size:110K philips
bfg67 bfg67x bfg67xr 4.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBFG67; BFG67/X; BFG67/XRNPN 8 GHz wideband transistors1998 Oct 02Product specificationSupersedes data of September 1995Philips Semiconductors Product specificationNPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XRFEATURES PINNING High power gainDESCRIPTIONPIN Low noise figureBFG67 BFG67/X BFG67/XR High transition freq
..2. Size:1728K kexin
bfg67x.pdf 
SMD Type TransistorsNPN TransistorsBFG67X (KFG67X)SOT-143 Unit:mm2.900.1 1.300.1X Features Collector Current Capability IC=50mA0~0.1 Collector Emitter Voltage VCEO=10V2.300.21.90 (Typ) 0.48 (max) High power gain0.38 (min) 4 3 Low noise figure High transition frequency1 20.45 (max) 0.88 (max) 0.15 (min) detail X1.70 (Ty
9.1. Size:102K philips
bfg67w bfg67wx bfg67wxr 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETBFG67WBFG67W/X; BFG67W/XRNPN 8 GHz wideband transistorAugust 1995Product specificationFile under Discrete Semiconductors, SC14Philips SemiconductorsPhilips Semiconductors Product specificationBFG67WNPN 8 GHz wideband transistorBFG67W/X; BFG67W/XRFEATURES MARKING High power gainTYPE NUMBER CODE Low noise figureBFG67W V2f
9.2. Size:287K philips
bfg67 x xr n.pdf 
BFG67; BFG67/X; BFG67/XRNPN 8 GHz wideband transistorsRev. 05 23 November 2007 Product data sheetIMPORTANT NOTICEDear customer,As from October 1st, 2006 Philips Semiconductors has a new trade name- NXP Semiconductors, which will be used in future data sheets together with new contactdetails.In data sheets where the previous Philips references remain, please use the new links
9.3. Size:1728K kexin
bfg67r.pdf 
SMD Type TransistorsNPN TransistorsBFG67R (KFG67R)Unit:mmSOT-143R2.900.1 1.300.1X Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=10V0~0.1 2.300.2 High power gain 1.90 (Typ) 0.48 (max) 0.38 (min) Low noise figure3 40.350.1 High transition frequency2 10.55 (max) 0.88 (max) 0.25 (min) detail
9.4. Size:1712K kexin
bfg67.pdf 
SMD Type TransistorsNPN TransistorsBFG67 (KFG67)SOT-143 Unit:mm2.900.1 1.300.1X Features Collector Current Capability IC=50mA0~0.1 Collector Emitter Voltage VCEO=10V2.300.21.90 (Typ) 0.48 (max) High power gain0.38 (min) 4 3 Low noise figure High transition frequency1 20.45 (max) 0.88 (max) 0.15 (min) detail X1.70 (Typ)
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