BFR10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFR10
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO39
Búsqueda de reemplazo de transistor bipolar BFR10
BFR10 Datasheet (PDF)
bfr106 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFR106NPN 5 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 5 GHz wideband transistor BFR106DESCRIPTION PINNINGNPN silicon planar epitaxial transistor PIN DESCRIPTIONin a plastic SOT23 envelope. It is lfpage 3Code: R7pprimarily intended for low noise, 1 basegeneral RF applicati
bfr106 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFR106NPN 5 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR106DESCRIPTION PINNINGNPN silicon planar epitaxial transistorPIN DESCRIPTIONage 3in a plastic SOT23 envelope. It isCode: R7pprimarily intended for
bfr106.pdf
BFR 106NPN Silicon RF Transistor For low noise, high-gain amplifiers For linear broadband amplifiers Special application: antenna amplifiers Complementary type: BFR 194 (PNP)ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 106 R7s Q62702-F1219 1 = B 2 = E 3 = C 4 = E SOT-23Maximum Rat
bfr106.pdf
BFR106Low Noise Silicon Bipolar RF Transistor High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports 5 V supply voltage Pb-free (RoHS compliant) package Qualification report according to
bfr106.pdf
isc Silicon NPN RF Transistor BFR106DESCRIPTIONLow Noise FigureNF = 2.5 dB TYP. @V = 8 V, I = 20 mA, f = 900 MHzCE CHigh GainS 2 = 10.5 dB TYP. @V = 8 V,I = 70 mA,f = 900 MHz21e CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
