BFR10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORS DATA SHEETBFR106NPN 5 GHz wideband transistorProduct specification September 1995NXP Semiconductors Product specificationNPN 5 GHz wideband transistor BFR106DESCRIPTION PINNINGNPN silicon planar epitaxial transistor PIN DESCRIPTIONin a plastic SOT23 envelope. It is lfpage 3Code: R7pprimarily intended for low noise, 1 basegeneral RF applicati

DISCRETE SEMICONDUCTORSDATA SHEETBFR106NPN 5 GHz wideband transistorSeptember 1995Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFR106DESCRIPTION PINNINGNPN silicon planar epitaxial transistorPIN DESCRIPTIONage 3in a plastic SOT23 envelope. It isCode: R7pprimarily intended for

BFR 106NPN Silicon RF Transistor For low noise, high-gain amplifiers For linear broadband amplifiers Special application: antenna amplifiers Complementary type: BFR 194 (PNP)ESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFR 106 R7s Q62702-F1219 1 = B 2 = E 3 = C 4 = E SOT-23Maximum Rat

BFR106Low Noise Silicon Bipolar RF Transistor High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports 5 V supply voltage Pb-free (RoHS compliant) package Qualification report according to

isc Silicon NPN RF Transistor BFR106DESCRIPTIONLow Noise FigureNF = 2.5 dB TYP. @V = 8 V, I = 20 mA, f = 900 MHzCE CHigh GainS 2 = 10.5 dB TYP. @V = 8 V,I = 70 mA,f = 900 MHz21e CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise ,high-gain amplifiers andlinear broadband amplifiers.