BFR10 Specs and Replacement

Type Designator: BFR10

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO39

 BFR10 Substitution

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BFR10 datasheet

 0.1. Size:206K  philips

bfr106 cnv.pdf pdf_icon

BFR10

DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION in a plastic SOT23 envelope. It is lfpage 3 Code R7p primarily intended for low noise, 1 base general RF applicati... See More ⇒

 0.2. Size:52K  philips

bfr106 cnv 2.pdf pdf_icon

BFR10

DISCRETE SEMICONDUCTORS DATA SHEET BFR106 NPN 5 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR106 DESCRIPTION PINNING NPN silicon planar epitaxial transistor PIN DESCRIPTION age 3 in a plastic SOT23 envelope. It is Code R7p primarily intended for... See More ⇒

 0.3. Size:57K  siemens

bfr106.pdf pdf_icon

BFR10

BFR 106 NPN Silicon RF Transistor For low noise, high-gain amplifiers For linear broadband amplifiers Special application antenna amplifiers Complementary type BFR 194 (PNP) ESD Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 106 R7s Q62702-F1219 1 = B 2 = E 3 = C 4 = E SOT-23 Maximum Rat... See More ⇒

 0.4. Size:616K  infineon

bfr106.pdf pdf_icon

BFR10

BFR106 Low Noise Silicon Bipolar RF Transistor High linearity low noise RF transistor 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA For UHF / VHF applications Driver for multistage amplifiers For linear broadband and antenna amplifiers Collector design supports 5 V supply voltage Pb-free (RoHS compliant) package Qualification report according to ... See More ⇒

Detailed specifications: BFQ85, BFQ86, BFQ88, BFQ88A, BFQ88B, BFQ89, BFQ98, BFQ98B, 2SC2073, BFR106, BFR11, BFR12, BFR134, BFR14, BFR14A, BFR14B, BFR14C

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