BFT25 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFT25
Código: V1_V1p
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.03 W
Tensión colector-base (Vcb): 8 V
Tensión colector-emisor (Vce): 5 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.005 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1200 MHz
Capacitancia de salida (Cc): 0.5 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de BFT25
BFT25 datasheet
bft25 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code V1p It is primarily intended for use in RF 1 base lfpage 3 low power amplifiers, such as in 2 emitter po
bft25 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor November 1992 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code V1p It is primarily intended for use in RF 1 base fpage 3 low po
bft25a cnv 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFT25A NPN 5 GHz wideband transistor December 1997 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A FEATURES PINNING Low current consumption PIN DESCRIPTION (100 A - 1 mA) Code V10 Low noise figure 1 base Gold metallization ensures 2
bft25a.pdf
BFT25A NPN 5 GHz wideband transistor Rev. 04 6 July 2004 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. 1.2 Features Low cur
Otros transistores... BFT19 , BFT19A , BFT19B , BFT20 , BFT21 , BFT22 , BFT23 , BFT24 , BD135 , BFT25R , BFT26 , BFT27 , BFT28 , BFT28A , BFT28B , BFT28C , BFT29 .
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