BFT25 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFT25
SMD Transistor Code: V1_V1p
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 8 V
Maximum Collector-Emitter Voltage |Vce|: 5 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1200 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT23
BFT25 Transistor Equivalent Substitute - Cross-Reference Search
BFT25 Datasheet (PDF)
bft25 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBFT25NPN 2 GHz wideband transistorProduct specification November 1992NXP Semiconductors Product specificationNPN 2 GHz wideband transistor BFT25DESCRIPTION PINNINGNPN transistor in a plastic SOT23 PIN DESCRIPTIONenvelope.Code: V1pIt is primarily intended for use in RF 1 baselfpage 3low power amplifiers, such as in 2 emitterpo
bft25 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFT25NPN 2 GHz wideband transistorNovember 1992Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz wideband transistor BFT25DESCRIPTION PINNINGNPN transistor in a plastic SOT23PIN DESCRIPTIONenvelope.Code: V1pIt is primarily intended for use in RF1 basefpage 3low po
bft25a cnv 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBFT25ANPN 5 GHz wideband transistorDecember 1997Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFT25AFEATURES PINNING Low current consumptionPIN DESCRIPTION(100 A - 1 mA)Code: V10 Low noise figure1 base Gold metallization ensures2
bft25a.pdf
BFT25ANPN 5 GHz wideband transistorRev. 04 6 July 2004 Product data sheet1. Product profile1.1 General descriptionThe BFT25A is a silicon NPN transistor, primarily intended for use in RF low poweramplifiers, such as pocket telephones and paging systems with signal frequencies upto 2 GHz.The transistor is encapsulated in a 3-pin plastic SOT23 envelope.1.2 Features Low cur
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
