DISCRETE SEMICONDUCTORS DATA SHEETBFT25NPN 2 GHz wideband transistorProduct specification November 1992NXP Semiconductors Product specificationNPN 2 GHz wideband transistor BFT25DESCRIPTION PINNINGNPN transistor in a plastic SOT23 PIN DESCRIPTIONenvelope.Code: V1pIt is primarily intended for use in RF 1 baselfpage 3low power amplifiers, such as in 2 emitterpo

DISCRETE SEMICONDUCTORSDATA SHEETBFT25NPN 2 GHz wideband transistorNovember 1992Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 2 GHz wideband transistor BFT25DESCRIPTION PINNINGNPN transistor in a plastic SOT23PIN DESCRIPTIONenvelope.Code: V1pIt is primarily intended for use in RF1 basefpage 3low po

DISCRETE SEMICONDUCTORSDATA SHEETBFT25ANPN 5 GHz wideband transistorDecember 1997Product specificationFile under Discrete Semiconductors, SC14Philips Semiconductors Product specificationNPN 5 GHz wideband transistor BFT25AFEATURES PINNING Low current consumptionPIN DESCRIPTION(100 A - 1 mA)Code: V10 Low noise figure1 base Gold metallization ensures2

BFT25ANPN 5 GHz wideband transistorRev. 04 6 July 2004 Product data sheet1. Product profile1.1 General descriptionThe BFT25A is a silicon NPN transistor, primarily intended for use in RF low poweramplifiers, such as pocket telephones and paging systems with signal frequencies upto 2 GHz.The transistor is encapsulated in a 3-pin plastic SOT23 envelope.1.2 Features Low cur