BFX34T
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFX34T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 70
MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar BFX34T
BFX34T
Datasheet (PDF)
9.1. Size:52K philips
bfx34 cnv 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFX34NPN switching transistor1997 Apr 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor BFX34FEATURES PINNING High current (max. 2 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 baseAPPLICATIONS
9.2. Size:50K st
bfx34 2.pdf
BFX34SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPNtransistor in Jedec TO-39 metal case, intented forhigh current applications.Very low saturation voltage and high speed athigh current levels make it ideal for power drivers,power amplifiers, switching power supplies andrelay drivers
9.3. Size:66K st
bfx34.pdf
BFX34SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPNtransistor in Jedec TO-39 metal case, intented forhigh current applications.Very low saturation voltage and high speed athigh current levels make it ideal for power drivers,power amplifiers, switching power supplies andrelay drivers inverters.
9.4. Size:10K semelab
bfx34smd05.pdf
BFX34SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herme
9.5. Size:10K semelab
bfx34smd.pdf
BFX34SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0.
9.6. Size:87K cdil
bfx34.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR BFX34TO-39NPN Transistor in a TO-39 Metal Envelope Primarily Intended For Use As High-Current Switching Device, e.g. Inverters And Switching Regulators.ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 120 VCollector -Emitte
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
