Справочник транзисторов. BFX34T

 

Биполярный транзистор BFX34T - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BFX34T
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 70 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO5

 Аналоги (замена) для BFX34T

 

 

BFX34T Datasheet (PDF)

 9.1. Size:52K  philips
 bfx34 cnv 2.pdf

BFX34T BFX34T

DISCRETE SEMICONDUCTORSDATA SHEETM3D111BFX34NPN switching transistor1997 Apr 22Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN switching transistor BFX34FEATURES PINNING High current (max. 2 A)PIN DESCRIPTION Low voltage (max. 60 V).1 emitter2 baseAPPLICATIONS

 9.2. Size:50K  st
 bfx34 2.pdf

BFX34T BFX34T

BFX34SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon Epitaxial Planar NPNtransistor in Jedec TO-39 metal case, intented forhigh current applications.Very low saturation voltage and high speed athigh current levels make it ideal for power drivers,power amplifiers, switching power supplies andrelay drivers

 9.3. Size:66K  st
 bfx34.pdf

BFX34T BFX34T

BFX34SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BFX34 is a silicon epitaxial planar NPNtransistor in Jedec TO-39 metal case, intented forhigh current applications.Very low saturation voltage and high speed athigh current levels make it ideal for power drivers,power amplifiers, switching power supplies andrelay drivers inverters.

 9.4. Size:10K  semelab
 bfx34smd05.pdf

BFX34T

BFX34SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herme

 9.5. Size:10K  semelab
 bfx34smd.pdf

BFX34T

BFX34SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0.

 9.6. Size:87K  cdil
 bfx34.pdf

BFX34T BFX34T

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR BFX34TO-39NPN Transistor in a TO-39 Metal Envelope Primarily Intended For Use As High-Current Switching Device, e.g. Inverters And Switching Regulators.ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 120 VCollector -Emitte

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .