BFY18 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFY18

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO18

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BFY18 datasheet

 0.1. Size:121K  siemens
 bfy182.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 182 Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.4 dB at 2 GHz qualified ESA/SCC Detail Spec. No. 5611/006 Micro-X1 ESD Electrostatic discharge sensitive device, observe handling pr

 0.2. Size:122K  siemens
 bfy183.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 183 Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No. 5611/006 Micro-X1 ESD Electrostatic discharge sensitive device, observe handling pr

 0.3. Size:121K  siemens
 bfy180.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 180 Features HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA Hermetically sealed microwave package fT = 6.5 GHz, F = 2.6 dB at 2 GHz qualified ESA/SCC Detail Spec. No. 5611/006 Micro-X1 ESD Electrostatic discharge sensitive device, observe handling precautions! Type M

 0.4. Size:121K  siemens
 bfy181.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 181 Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.2 dB at 2 GHz qualified ESA/SCC Detail Spec. No. 5611/006 Micro-X1 ESD Electrostatic discharge sensitive device, observe handling

MOSTRAR MÁS

Otros transistores... BFY13D, BFY14, BFY14B, BFY14C, BFY14D, BFY15, BFY16, BFY17, BC639, BFY19, BFY20, BFY21, BFY22, BFY23, BFY23A, BFY24, BFY25