BFY18 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HiRel NPN Silicon RF Transistor BFY 182Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 1 mA to 20 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.4 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling pr

HiRel NPN Silicon RF Transistor BFY 183Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 2 mA to 30 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling pr

HiRel NPN Silicon RF Transistor BFY 180Features HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from0.2 to 2.5 mA Hermetically sealed microwave package fT = 6.5 GHz, F = 2.6 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling precautions! Type M

HiRel NPN Silicon RF Transistor BFY 181Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 0.5 mA to 12 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.2 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling