BFY18 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFY18
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO18
Búsqueda de reemplazo de transistor bipolar BFY18
BFY18 Datasheet (PDF)
bfy182.pdf
HiRel NPN Silicon RF Transistor BFY 182Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 1 mA to 20 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.4 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling pr
bfy183.pdf
HiRel NPN Silicon RF Transistor BFY 183Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 2 mA to 30 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling pr
bfy180.pdf
HiRel NPN Silicon RF Transistor BFY 180Features HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from0.2 to 2.5 mA Hermetically sealed microwave package fT = 6.5 GHz, F = 2.6 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling precautions! Type M
bfy181.pdf
HiRel NPN Silicon RF Transistor BFY 181Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 0.5 mA to 12 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.2 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
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