All Transistors. BFY18 Datasheet

 

BFY18 Datasheet and Replacement


   Type Designator: BFY18
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO18
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BFY18 Datasheet (PDF)

 0.1. Size:121K  siemens
 bfy182.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 182Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 1 mA to 20 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.4 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling pr

 0.2. Size:122K  siemens
 bfy183.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 183Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 2 mA to 30 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling pr

 0.3. Size:121K  siemens
 bfy180.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 180Features HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from0.2 to 2.5 mA Hermetically sealed microwave package fT = 6.5 GHz, F = 2.6 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling precautions! Type M

 0.4. Size:121K  siemens
 bfy181.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 181Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 0.5 mA to 12 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.2 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling

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Keywords - BFY18 transistor datasheet

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