BFY18 Specs and Replacement

Type Designator: BFY18

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO18

 BFY18 Substitution

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BFY18 datasheet

 0.1. Size:121K  siemens

bfy182.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 182 Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.4 dB at 2 GHz qualified ESA/SCC Detail Spec. No. 5611/006 Micro-X1 ESD Electrostatic discharge sensitive device, observe handling pr... See More ⇒

 0.2. Size:122K  siemens

bfy183.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 183 Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No. 5611/006 Micro-X1 ESD Electrostatic discharge sensitive device, observe handling pr... See More ⇒

 0.3. Size:121K  siemens

bfy180.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 180 Features HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA Hermetically sealed microwave package fT = 6.5 GHz, F = 2.6 dB at 2 GHz qualified ESA/SCC Detail Spec. No. 5611/006 Micro-X1 ESD Electrostatic discharge sensitive device, observe handling precautions! Type M... See More ⇒

 0.4. Size:121K  siemens

bfy181.pdf pdf_icon

BFY18

HiRel NPN Silicon RF Transistor BFY 181 Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.2 dB at 2 GHz qualified ESA/SCC Detail Spec. No. 5611/006 Micro-X1 ESD Electrostatic discharge sensitive device, observe handling ... See More ⇒

Detailed specifications: BFY13D, BFY14, BFY14B, BFY14C, BFY14D, BFY15, BFY16, BFY17, BC639, BFY19, BFY20, BFY21, BFY22, BFY23, BFY23A, BFY24, BFY25

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