BFY18 Datasheet, Equivalent, Cross Reference Search
Type Designator: BFY18
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO18
BFY18 Transistor Equivalent Substitute - Cross-Reference Search
BFY18 Datasheet (PDF)
bfy182.pdf
HiRel NPN Silicon RF Transistor BFY 182Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 1 mA to 20 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.4 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling pr
bfy183.pdf
HiRel NPN Silicon RF Transistor BFY 183Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 2 mA to 30 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling pr
bfy180.pdf
HiRel NPN Silicon RF Transistor BFY 180Features HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from0.2 to 2.5 mA Hermetically sealed microwave package fT = 6.5 GHz, F = 2.6 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling precautions! Type M
bfy181.pdf
HiRel NPN Silicon RF Transistor BFY 181Features HiRel Discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers atcollector currents from 0.5 mA to 12 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.2 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/006Micro-X1ESD: Electrostatic discharge sensitive device, observe handling
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
