BLV10 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLV10
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 36 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1000 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: M174
Búsqueda de reemplazo de BLV10
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BLV10 datasheet
blv10.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV10 It has a 3/8 flange envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the flange. transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.
blv100.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV100 FEATURES PIN CONFIGURATION Internal input matching to achieve high power gain Ballasting resistors for an optimum halfpage temperature profile Gold metallization ensures excellent reliability. 1 2 c
blv103.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV103 FEATURES QUICK REFERENCE DATA RF performance at Th =25 C in a common emitter test circuit. Internal matching for an optimum wideband capability and high gain f VCE PL Gp C MODE OF OPERATION Emitter-ball
blv108.pdf
BLV108 N MOSFET N MOSFET N MOSFET N MOSFET N VDMOS (T=25 ) (T=25 ) (T=25 )
Otros transistores... BLU50, BLU51, BLU52, BLU53, BLU60-12, BLU97, BLU98, BLU99, BD140, BLV11, BLV15-12, BLV20, BLV21, BLV25, BLV30, BLV30-12, BLV31
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