BLV10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLV10
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 18 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 1000 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: M174

Búsqueda de reemplazo de transistor bipolar BLV10

BLV10 Datasheet (PDF)

..1. Size:66K philips
blv10.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLV10VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV10It has a 3/8 flange envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the flange.transistor intended for use in class-A,B and C operated mobile, h.f. andv.h.

0.1. Size:63K philips
blv100.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLV100UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV100FEATURES PIN CONFIGURATION Internal input matching to achievehigh power gain Ballasting resistors for an optimumhalfpagetemperature profile Gold metallization ensuresexcellent reliability.1 2c

0.2. Size:70K philips
blv103.pdf

DISCRETE SEMICONDUCTORSDATA SHEETBLV103UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV103FEATURES QUICK REFERENCE DATARF performance at Th =25C in a common emitter test circuit. Internal matching for an optimumwideband capability and high gainf VCE PL Gp CMODE OF OPERATION Emitter-ball

0.3. Size:86K belling
blv108.pdf