BLV10 Datasheet, Equivalent, Cross Reference Search
Type Designator: BLV10
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: M174
BLV10 Transistor Equivalent Substitute - Cross-Reference Search
BLV10 Datasheet (PDF)
blv10.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV10VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV10It has a 3/8 flange envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the flange.transistor intended for use in class-A,B and C operated mobile, h.f. andv.h.
blv100.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV100UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV100FEATURES PIN CONFIGURATION Internal input matching to achievehigh power gain Ballasting resistors for an optimumhalfpagetemperature profile Gold metallization ensuresexcellent reliability.1 2c
blv103.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBLV103UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV103FEATURES QUICK REFERENCE DATARF performance at Th =25C in a common emitter test circuit. Internal matching for an optimumwideband capability and high gainf VCE PL Gp CMODE OF OPERATION Emitter-ball
blv108.pdf
BLV108 N MOSFET N MOSFETN MOSFETN MOSFET: :: : N VDMOS (T=25) (T=25) (T=25)
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .