BLV10 Specs and Replacement
Type Designator: BLV10
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: M174
BLV10 Substitution
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BLV10 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV10 It has a 3/8 flange envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the flange. transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV100 FEATURES PIN CONFIGURATION Internal input matching to achieve high power gain Ballasting resistors for an optimum halfpage temperature profile Gold metallization ensures excellent reliability. 1 2 c... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV103 FEATURES QUICK REFERENCE DATA RF performance at Th =25 C in a common emitter test circuit. Internal matching for an optimum wideband capability and high gain f VCE PL Gp C MODE OF OPERATION Emitter-ball... See More ⇒
BLV108 N MOSFET N MOSFET N MOSFET N MOSFET N VDMOS (T=25 ) (T=25 ) (T=25 ) ... See More ⇒
Detailed specifications: BLU50, BLU51, BLU52, BLU53, BLU60-12, BLU97, BLU98, BLU99, BD140, BLV11, BLV15-12, BLV20, BLV21, BLV25, BLV30, BLV30-12, BLV31
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History: BLY85 | SMUN5315DW | SMUN5333DW | 2N1097 | BLY86 | BLY83
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