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BSS25 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS25
   Código: HA
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.4 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO92
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BSS25 Datasheet (PDF)

 0.1. Size:65K  philips
pbss2515f 1.pdf pdf_icon

BSS25

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PBSS2515FNPN transistorProduct specification 2000 Oct 25Philips Semiconductors Product specificationNPN transistor PBSS2515FFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 emitterAPPLICATIONS3 collector Heavy duty battery powered equipment (automotive,telecom and audio video) such as

 0.2. Size:142K  philips
pbss2515vs.pdf pdf_icon

BSS25

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS2515VS15 V low VCE(sat) NPN double transistorProduct data sheet 2004 Dec 23Supersedes data of 2001 Nov 07NXP Semiconductors Product data sheet15 V low VCE(sat) NPN double transistorPBSS2515VSFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 1.2 mm ultra thin pac

 0.3. Size:120K  philips
pbss2515e.pdf pdf_icon

BSS25

PBSS2515E15 V, 0.5 A NPN low VCEsat (BISS) transistorRev. 02 21 April 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra smallSOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS3515E.1.2 Features Low collector-emitter saturation voltage VCEsat High collecto

 0.4. Size:604K  nxp
pbss2540mb.pdf pdf_icon

BSS25

PBSS2540MB40 V, 0.5 A NPN low VCEsat (BISS) transistorRev. 1 4 April 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB.1.2 Features and benefits Leadless ultra small SMD plasti

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MMBR4957LT3 | CX954E | 3DD13009_C8

 

 
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