BSS25 Datasheet. Specs and Replacement
Type Designator: BSS25 📄📄
SMD Transistor Code: HA
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO92
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BSS25 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F NPN transistor Product specification 2000 Oct 25 Philips Semiconductors Product specification NPN transistor PBSS2515F FEATURES PINNING Low VCEsat PIN DESCRIPTION High current capabilities. 1 base 2 emitter APPLICATIONS 3 collector Heavy duty battery powered equipment (automotive, telecom and audio video) such as ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VS 15 V low VCE(sat) NPN double transistor Product data sheet 2004 Dec 23 Supersedes data of 2001 Nov 07 NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN double transistor PBSS2515VS FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 1.2 mm ultra thin pac... See More ⇒
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PBSS2540MB 40 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS3540MB. 1.2 Features and benefits Leadless ultra small SMD plasti... See More ⇒
Detailed specifications: BSS17, BSS18, BSS19, BSS20, BSS21, BSS22, BSS23, BSS24, BC546, BSS26, BSS27, BSS28, BSS29, BSS30, BSS31, BSS32, BSS33
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BJT Parameters and How They Relate
History: RN2107 | KRC868E | RN1904AFS | RN2707JE | RN2711JE | NSS40200UW6T1G | BDX14
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