BSS81C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS81C
Código: CG_CGs
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.33 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 35 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 0.8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO236
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BSS81C Datasheet (PDF)
pbss8110d.pdf

PBSS8110D100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a plastic SOT457 (SC-74) package.1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation1.3
pbss8110x.pdf

PBSS8110X100 V, 1 A NPN low VCEsat (BISS) transistorRev. 01 11 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.PNP complement: PBSS9110X.1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili
pbss8110t.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBSS8110T100 V, 1 ANPN low VCEsat (BISS) transistorProduct specification 2003 Dec 22Supersedes data of 2003 Jul 28Philips Semiconductors Product specification100 V, 1 APBSS8110TNPN low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURESSYMBOL PARAMETER MAX. UNIT SOT23 packageVCEO collector-emitter voltag
pbss8110y.pdf

PBSS8110Y100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 21 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a SOT363 (SC-88) plastic package.1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation1.3 Applicati
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 30DA070D | KT6127I | 2G601 | 2SA1427 | FA4A4P | 2SD1906R | 2SC1818
History: 30DA070D | KT6127I | 2G601 | 2SA1427 | FA4A4P | 2SD1906R | 2SC1818



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