All Transistors. BSS81C Datasheet

 

BSS81C Datasheet and Replacement


   Type Designator: BSS81C
   SMD Transistor Code: CG_CGs
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.33 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO236
 

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BSS81C Datasheet (PDF)

 9.1. Size:150K  nxp
pbss8110d.pdf pdf_icon

BSS81C

PBSS8110D100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a plastic SOT457 (SC-74) package.1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation1.3

 9.2. Size:135K  nxp
pbss8110x.pdf pdf_icon

BSS81C

PBSS8110X100 V, 1 A NPN low VCEsat (BISS) transistorRev. 01 11 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.PNP complement: PBSS9110X.1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili

 9.3. Size:123K  nxp
pbss8110t.pdf pdf_icon

BSS81C

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBSS8110T100 V, 1 ANPN low VCEsat (BISS) transistorProduct specification 2003 Dec 22Supersedes data of 2003 Jul 28Philips Semiconductors Product specification100 V, 1 APBSS8110TNPN low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURESSYMBOL PARAMETER MAX. UNIT SOT23 packageVCEO collector-emitter voltag

 9.4. Size:163K  nxp
pbss8110y.pdf pdf_icon

BSS81C

PBSS8110Y100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 21 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a SOT363 (SC-88) plastic package.1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation1.3 Applicati

Datasheet: BSS79 , BSS79B , BSS79C , BSS80 , BSS80B , BSS80C , BSS81 , BSS81B , BC548 , BSS82 , BSS82B , BSS82BL , BSS82C , BSS82CL , BSS99 , BST15 , BST16 .

History: 2N6363 | MMT8015 | SUR523H | 2S138 | ZTX382C | OC170 | 2S173

Keywords - BSS81C transistor datasheet

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