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BST52 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BST52
   Código: AS3
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 90 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: SOT89

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BST52 Datasheet (PDF)

 ..1. Size:51K  philips
bst50 bst51 bst52 3.pdf

BST52 BST52

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BST50; BST51; BST52NPN Darlington transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 16Philips Semiconductors Product specificationNPN Darlington transistors BST50; BST51; BST52FEATURES PINNING High current (max. 0.5 A)PIN DESCRIPTION Low voltage (max. 80 V)1 emitter Integrated dio

 ..2. Size:15K  diodes
bst52.pdf

BST52

SOT89 NPN SILICON PLANARBST52DARLINGTON TRANSISTORISSUE 3 JANUARY 1996FEATURES* Fast SwitchingC* High hFEEPARTMAKING DETAIL AS3CBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 90 VCollector-Emitter Voltage VCEO 80 VEmitter-Base Voltage VEBO 10 VPea Pulse Current ICM 1.5 AContinuous Collector Current IC 500 mAB

 ..3. Size:289K  htsemi
bst52.pdf

BST52

BST52TRANSISTOR (NPN) SOT-89-3L FEATURES Low Voltage1. BASE High Current2. COLLECTOR Integrated Diode and Resistor APPLICATIONS 3. EMITTER Industrial Switching Applications: Print Hammer, Solenoid, Relay and Lamp Driving MARKING:AS3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 90 V VCEO Collector-

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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