DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BST50; BST51; BST52NPN Darlington transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 16Philips Semiconductors Product specificationNPN Darlington transistors BST50; BST51; BST52FEATURES PINNING High current (max. 0.5 A)PIN DESCRIPTION Low voltage (max. 80 V)1 emitter Integrated dio

SOT89 NPN SILICON PLANARBST52DARLINGTON TRANSISTORISSUE 3 JANUARY 1996FEATURES* Fast SwitchingC* High hFEEPARTMAKING DETAIL AS3CBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 90 VCollector-Emitter Voltage VCEO 80 VEmitter-Base Voltage VEBO 10 VPea Pulse Current ICM 1.5 AContinuous Collector Current IC 500 mAB

BST52TRANSISTOR (NPN) SOT-89-3L FEATURES Low Voltage1. BASE High Current2. COLLECTOR Integrated Diode and Resistor APPLICATIONS 3. EMITTER Industrial Switching Applications: Print Hammer, Solenoid, Relay and Lamp Driving MARKING:AS3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 90 V VCEO Collector-