BST52 Datasheet and Replacement
Type Designator: BST52
SMD Transistor Code: AS3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: SOT89
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BST52 Datasheet (PDF)
bst50 bst51 bst52 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BST50; BST51; BST52NPN Darlington transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 16Philips Semiconductors Product specificationNPN Darlington transistors BST50; BST51; BST52FEATURES PINNING High current (max. 0.5 A)PIN DESCRIPTION Low voltage (max. 80 V)1 emitter Integrated dio
bst52.pdf

SOT89 NPN SILICON PLANARBST52DARLINGTON TRANSISTORISSUE 3 JANUARY 1996FEATURES* Fast SwitchingC* High hFEEPARTMAKING DETAIL AS3CBSOT89ABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 90 VCollector-Emitter Voltage VCEO 80 VEmitter-Base Voltage VEBO 10 VPea Pulse Current ICM 1.5 AContinuous Collector Current IC 500 mAB
bst52.pdf

BST52TRANSISTOR (NPN) SOT-89-3L FEATURES Low Voltage1. BASE High Current2. COLLECTOR Integrated Diode and Resistor APPLICATIONS 3. EMITTER Industrial Switching Applications: Print Hammer, Solenoid, Relay and Lamp Driving MARKING:AS3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 90 V VCEO Collector-
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: SJE1349 | CJD41C | NSVDTA114EM3T5G | IT139TO71 | KST1623L4 | BTC3356N3 | UMD12N
Keywords - BST52 transistor datasheet
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History: SJE1349 | CJD41C | NSVDTA114EM3T5G | IT139TO71 | KST1623L4 | BTC3356N3 | UMD12N



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