2N319 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N319 📄📄

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 35

Encapsulados: TO5

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2N319 datasheet

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isc Silicon PNP Power Transistor 2N3198 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

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2n3196.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3196 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

0.3. Size:171K inchange semiconductor
2n3195.pdf pdf_icon

isc Silicon PNP Power Transistor 2N3195 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

Otros transistores... 2N3182, 2N3183, 2N3184, 2N3185, 2N3186, 2N3187, 2N3188, 2N3189, BC557, 2N3190, 2N3191, 2N3192, 2N3193, 2N3194, 2N3195, 2N3196, 2N3197

2N319 Datasheet. Equivalente