2N319 Datasheet. Specs and Replacement

Type Designator: 2N319  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO5

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2N319 datasheet

 ..1. Size:327K  general electric

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2N319

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isc Silicon PNP Power Transistor 2N3198 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

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isc Silicon PNP Power Transistor 2N3196 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

 0.3. Size:171K  inchange semiconductor

 2n3195.pdf pdf_icon

2N319

isc Silicon PNP Power Transistor 2N3195 DESCRIPTION Excellent Safe Operating Area With TO-3 package Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒

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Detailed specifications: 2N3182, 2N3183, 2N3184, 2N3185, 2N3186, 2N3187, 2N3188, 2N3189, S8050, 2N3190, 2N3191, 2N3192, 2N3193, 2N3194, 2N3195, 2N3196, 2N3197

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