2N32 Todos los transistores

 

2N32 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N32

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 35 V

Corriente del colector DC máxima (Ic): 0.008 A

Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.9 MHz

Capacitancia de salida (Cc): 45 pF

Ganancia de corriente contínua (hfe): 22

Empaquetado / Estuche: TO22

Búsqueda de reemplazo de transistor bipolar 2N32

 

2N32 Datasheet (PDF)

1.1. 2n3266.pdf Size:259K _rca

2N32



1.2. 2n3265.pdf Size:258K _rca

2N32



 1.3. 2n32 2n33 2n34 2n35.pdf Size:395K _rca

2N32



1.4. 2n3264.pdf Size:557K _rca

2N32



 1.5. 2n3263.pdf Size:624K _rca

2N32



1.6. 2n319 2n320 2n321.pdf Size:327K _general_electric

2N32



1.7. 2n322 2n323 2n324.pdf Size:274K _general_electric

2N32



1.8. 2n2894 2n3209.pdf Size:113K _st

2N32
2N32



1.9. 2n3250 2n3251.pdf Size:88K _central

2N32
2N32

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.10. 2n3228.pdf Size:135K _no

2N32
2N32



1.11. 2n3244.pdf Size:11K _semelab

2N32

2N3244 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 40V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.12. 2n3202.pdf Size:11K _semelab

2N32

2N3202 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 40V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.13. 2n3251dcsm.pdf Size:417K _semelab

2N32
2N32

DUAL PNP SWITCHING TRANSISTORS 2N3251DCSM • Dual Silicon Planer PNP Transistors • Hermetic Ceramic Surface Mount Package • Designed For Small Signal, General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25°C unless otherwise stated) Each Side Total Device VCBO Collector – Base Voltage -50V VCEO C

1.14. 2n3209xcsm.pdf Size:25K _semelab

2N32
2N32

2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) APPLICATIONS 3 2 1 FEATURES • SILICON PLANAR EPITAXIAL PNP 1.91 ± 0.10 (0.075 ± 0.004) A TRANSISTOR 0.31 rad. (0.012) 3.05 ± 0.13 • HERMETIC CERAMIC SURFACE MOUNT (0.12 ± 0.005) 1.40 (0.055) PA

1.15. 2n3251csm.pdf Size:11K _semelab

2N32

2N3251CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 ± 0.10 Hermetically sealed LCC1 (0.02 ± 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 (0.055) 1.02 ± 0.10 max. VCEO = 60V A = (0.04 ± 0.004

1.16. 2n3209x.pdf Size:24K _semelab

2N32
2N32

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209) TRANSISTOR 4.95 (0.195) 4.52 (0.178) FOR HIGH RELIABILITY APPLICATIONS FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • SCREENING OPTIONS AVAILABLE 0.48 (0.019) • SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) • HIGH SPEED SATURATED SWITCHING dia. APPLI

1.17. 2n3250 2n3251-a.pdf Size:183K _bocasemi

2N32
2N32

Boca Semiconductor Corp. BSC http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com

1.18. 2n3250 1.pdf Size:208K _cdil

2N32
2N32

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250 2N3250A DESCRIPTION SYMBOL UNIT 2N3251 2N3251A VCEO Collector Emitter Voltage 40 60 V VCBO Collector Bas

1.19. 2n3250aub.pdf Size:129K _microsemi

2N32
2N32

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland. 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3251A JAN 2N3250AUB 2N3251AUB JANTX JAN

1.20. wpt2n32.pdf Size:347K _willsemi

2N32
2N32

WPT2N32 WPT2N32 Single, PNP, -30V, -1A, Power Transistor with Http//:www.willsemi.com 20V N-MOSFET Descriptions The WPT2N32 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. DFN2x2-6L Standard Product WPT2N32 is Pb-free. C 6 1 E C B G 5 2 D Features D 3 S 4  Ultra low collec

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , A733 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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