Аналоги (замена) для 2N32

 

 

2N32 Datasheet (PDF)

1.1. 2n3266.pdf Size:259K _rca



1.2. 2n3265.pdf Size:258K _rca



 1.3. 2n32 2n33 2n34 2n35.pdf Size:395K _rca



1.4. 2n3264.pdf Size:557K _rca



 1.5. 2n3263.pdf Size:624K _rca



1.6. 2n319 2n320 2n321.pdf Size:327K _general_electric



1.7. 2n322 2n323 2n324.pdf Size:274K _general_electric



1.8. 2n2894 2n3209.pdf Size:113K _st



1.9. 2n3250 2n3251.pdf Size:88K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 

1.10. 2n3228.pdf Size:135K _no



1.11. 2n3244.pdf Size:11K _semelab

2N3244 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 40V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.12. 2n3202.pdf Size:11K _semelab

2N3202 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 40V dia. IC = 3A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.13. 2n3251dcsm.pdf Size:417K _semelab

DUAL PNP SWITCHING TRANSISTORS 2N3251DCSM • Dual Silicon Planer PNP Transistors • Hermetic Ceramic Surface Mount Package • Designed For Small Signal, General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25°C unless otherwise stated) Each Side Total Device VCBO Collector – Base Voltage -50V VCEO C

1.14. 2n3209xcsm.pdf Size:25K _semelab

2N3209XCSM MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) SWITCHING TRANSISTOR FOR HIGH RELIABILITY 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) APPLICATIONS 3 2 1 FEATURES • SILICON PLANAR EPITAXIAL PNP 1.91 ± 0.10 (0.075 ± 0.004) A TRANSISTOR 0.31 rad. (0.012) 3.05 ± 0.13 • HERMETIC CERAMIC SURFACE MOUNT (0.12 ± 0.005) 1.40 (0.055) PA

1.15. 2n3251csm.pdf Size:11K _semelab

2N3251CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 ± 0.10 Hermetically sealed LCC1 (0.02 ± 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 (0.055) 1.02 ± 0.10 max. VCEO = 60V A = (0.04 ± 0.004

1.16. 2n3209x.pdf Size:24K _semelab

2N3209X MECHANICAL DATA HIGH SPEED PNP Dimensions in mm (inches) 5.84 (0.230) SWITCHING 5.31 (0.209) TRANSISTOR 4.95 (0.195) 4.52 (0.178) FOR HIGH RELIABILITY APPLICATIONS FEATURES • SILICON PLANAR EPITAXIAL PNP TRANSISTOR • SCREENING OPTIONS AVAILABLE 0.48 (0.019) • SPACE QUALITY LEVEL OPTIONS 0.41 (0.016) • HIGH SPEED SATURATED SWITCHING dia. APPLI

1.17. 2n3250 2n3251-a.pdf Size:183K _bocasemi

Boca Semiconductor Corp. BSC http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com http://www.bocasemi.com

1.18. 2n3250 1.pdf Size:208K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250 2N3250A DESCRIPTION SYMBOL UNIT 2N3251 2N3251A VCEO Collector Emitter Voltage 40 60 V VCBO Collector Bas

1.19. 2n3250aub.pdf Size:129K _microsemi

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland. 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3251A JAN 2N3250AUB 2N3251AUB JANTX JAN

1.20. 2n3226.pdf Size:170K _inchange_semiconductor

isc Silicon NPN Power Transistor 2N3226 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% test ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for power amplifier and switching circuits applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

1.21. 2n3238.pdf Size:171K _inchange_semiconductor

isc Silicon NPN Power Transistor 2N3238 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALU

1.22. 2n3236.pdf Size:170K _inchange_semiconductor

isc Silicon NPN Power Transistor 2N3236 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALU

1.23. 2n3232.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3232 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio amplifier and power switching PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM

1.24. 2n3237.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3237 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATIN

1.25. 2n3233.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3233 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio amplifier and power switching PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM

1.26. 2n3239.pdf Size:170K _inchange_semiconductor

isc Silicon NPN Power Transistor 2N3239 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALU

1.27. 2n3240.pdf Size:171K _inchange_semiconductor

isc Silicon NPN Power Transistor 2N3240 DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALU

1.28. 2n3234.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3234 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio amplifier and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(

1.29. 2n3235.pdf Size:129K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3235 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·Designed for general–purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE

1.30. wpt2n32.pdf Size:347K _willsemi

WPT2N32 WPT2N32 Single, PNP, -30V, -1A, Power Transistor with Http//:www.willsemi.com 20V N-MOSFET Descriptions The WPT2N32 is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit and other power management. DFN2x2-6L Standard Product WPT2N32 is Pb-free. C 6 1 E C B G 5 2 D Features D 3 S 4  Ultra low collec

     

 

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