BU1706AX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU1706AX
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 32 W
Tensión colector-base (Vcb): 1750 V
Tensión colector-emisor (Vce): 850 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 80 pF
Ganancia de corriente contínua (hfe): 12
Paquete / Cubierta: SOT186
Búsqueda de reemplazo de transistor bipolar BU1706AX
BU1706AX Datasheet (PDF)
bu1706ax.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emi
bu1706ax.pdf
isc Silicon NPN Power Transistor BU1706AXDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lightingballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV 1500 VCESMV = 0
bu1706a.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltag
bu1706ab.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTIONHigh-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended foruse in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak
bu1706a.pdf
isc Silicon NPN Power Transistor BU1706ADESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lightingballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV 1500 VCESMV = 0B
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050