Биполярный транзистор BU1706AX
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BU1706AX
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 32
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1750
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 850
V
Макcимальный постоянный ток коллектора (Ic): 5
A
Предельная температура PN-перехода (Tj): 150
°C
Ёмкость коллекторного перехода (Cc): 80
pf
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора:
SOT186
Аналоги (замена) для BU1706AX
BU1706AX
Datasheet (PDF)
..1. Size:60K philips
bu1706ax.pdf Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emi
..2. Size:208K inchange semiconductor
bu1706ax.pdf isc Silicon NPN Power Transistor BU1706AXDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lightingballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV 1500 VCESMV = 0
7.1. Size:59K philips
bu1706a.pdf Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltag
7.2. Size:63K philips
bu1706ab.pdf Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTIONHigh-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended foruse in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak
7.3. Size:211K inchange semiconductor
bu1706a.pdf isc Silicon NPN Power Transistor BU1706ADESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lightingballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV 1500 VCESMV = 0B
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