BU1706AX Specs and Replacement

Type Designator: BU1706AX

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 32 W

Maximum Collector-Base Voltage |Vcb|: 1750 V

Maximum Collector-Emitter Voltage |Vce|: 850 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: SOT186

 BU1706AX Substitution

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BU1706AX datasheet

 ..1. Size:60K  philips

bu1706ax.pdf pdf_icon

BU1706AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi... See More ⇒

 ..2. Size:208K  inchange semiconductor

bu1706ax.pdf pdf_icon

BU1706AX

isc Silicon NPN Power Transistor BU1706AX DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT Collector-Emitter Voltage V 1500 V CESM V = 0 ... See More ⇒

 7.1. Size:59K  philips

bu1706a.pdf pdf_icon

BU1706AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltag... See More ⇒

 7.2. Size:63K  philips

bu1706ab.pdf pdf_icon

BU1706AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTION High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak... See More ⇒

Detailed specifications: BU141, BU142, BU143, BU144, BU1508AX, BU1508DX, BU157, BU1706A, 2N2222, BU1708AX, BU180, BU180A, BU181, BU181A, BU184, BU189, BU204

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