All Transistors. BU1706AX Datasheet

 

BU1706AX Datasheet and Replacement


   Type Designator: BU1706AX
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 32 W
   Maximum Collector-Base Voltage |Vcb|: 1750 V
   Maximum Collector-Emitter Voltage |Vce|: 850 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: SOT186
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BU1706AX Datasheet (PDF)

 ..1. Size:60K  philips
 bu1706ax.pdf pdf_icon

BU1706AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emi

 ..2. Size:208K  inchange semiconductor
 bu1706ax.pdf pdf_icon

BU1706AX

isc Silicon NPN Power Transistor BU1706AXDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lightingballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV 1500 VCESMV = 0

 7.1. Size:59K  philips
 bu1706a.pdf pdf_icon

BU1706AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltag

 7.2. Size:63K  philips
 bu1706ab.pdf pdf_icon

BU1706AX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTIONHigh-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended foruse in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak

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History: AUY19-3 | KT8255A | BC859W | 2SC4370AP | 2SD471 | JA100 | AC138

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