BU1706AX Datasheet, Equivalent, Cross Reference Search
Type Designator: BU1706AX
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 32 W
Maximum Collector-Base Voltage |Vcb|: 1750 V
Maximum Collector-Emitter Voltage |Vce|: 850 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: SOT186
BU1706AX Transistor Equivalent Substitute - Cross-Reference Search
BU1706AX Datasheet (PDF)
bu1706ax.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emi
bu1706ax.pdf
isc Silicon NPN Power Transistor BU1706AXDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lightingballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV 1500 VCESMV = 0
bu1706a.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706A GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelopeintended for use in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltag
bu1706ab.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AB GENERAL DESCRIPTIONHigh-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended foruse in high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak
bu1706a.pdf
isc Silicon NPN Power Transistor BU1706ADESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high frequency electronic lightingballast applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITCollector-Emitter VoltageV 1500 VCESMV = 0B
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