BU326P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BU326AHIGH VOLTAGE NPN SILICON POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEEDAPPLICATIONS: POWER SUPPLIES LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 1 2DESCRIPTION TO-3The BU326A is a silicon multiepitaxial mesa NPNtransistor in Jedec TO-3 metal case particularlyintended for switch-mode CTV supply system.INTERNAL SCHEMATIC D

isc Silicon NPN Power Transistor BU326SDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersupplies.ABSOLUTE MAXIMU

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A DESCRIPTION With TO-3 package High voltage;high speed Low collector saturation voltage. APPLICATIONS Intended for operating in CTV receivers chopper supplies. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collector Abs

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU326ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersu

isc Silicon NPN Power Transistor BU326DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 375V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersupplies.ABSOLUTE MAXIMUM