All Transistors. BU326P Datasheet

 

BU326P Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU326P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 62 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3

 BU326P Transistor Equivalent Substitute - Cross-Reference Search

   

BU326P Datasheet (PDF)

 9.1. Size:62K  st
bu326a.pdf

BU326P
BU326P

BU326AHIGH VOLTAGE NPN SILICON POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEEDAPPLICATIONS: POWER SUPPLIES LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 1 2DESCRIPTION TO-3The BU326A is a silicon multiepitaxial mesa NPNtransistor in Jedec TO-3 metal case particularlyintended for switch-mode CTV supply system.INTERNAL SCHEMATIC D

 9.2. Size:208K  inchange semiconductor
bu326s.pdf

BU326P
BU326P

isc Silicon NPN Power Transistor BU326SDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersupplies.ABSOLUTE MAXIMU

 9.3. Size:131K  inchange semiconductor
bu326 bu326a.pdf

BU326P
BU326P

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU326 BU326A DESCRIPTION With TO-3 package High voltage;high speed Low collector saturation voltage. APPLICATIONS Intended for operating in CTV receivers chopper supplies. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collector Abs

 9.4. Size:205K  inchange semiconductor
bu326a.pdf

BU326P
BU326P

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU326ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersu

 9.5. Size:206K  inchange semiconductor
bu326.pdf

BU326P
BU326P

isc Silicon NPN Power Transistor BU326DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 375V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 1.5V(Max.) @ I = 2.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in operating in color TV receivers choppersupplies.ABSOLUTE MAXIMUM

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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