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BU408D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU408D
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TOP66

 Búsqueda de reemplazo de transistor bipolar BU408D

 

BU408D Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
bu408d.pdf

BU408D
BU408D

isc Silicon NPN Power Transistor BU408DDESCRIPTIONHigh Voltage: V = 400V(Min)CEVFast Switching Speed-: t = 0.5s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIM

 9.1. Size:45K  fairchild semi
bu406 bu406h bu408 bu406 bu408.pdf

BU408D
BU408D

BU406/406H/408High Voltage Switching Use In Horizontal Deflection Output StageTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Co

 9.2. Size:61K  samsung
bu406 bu406 bu406h bu408 sam.pdf

BU408D
BU408D

BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE SWITCHINGTO-220USE IN HORIZONTAL DEFLECTIONOUTPUT STAGEABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current

 9.3. Size:212K  inchange semiconductor
bu408.pdf

BU408D
BU408D

isc Silicon NPN Power Transistor BU408DESCRIPTIONHigh Voltage: V = 400V(Min)CEVFast Switching Speed-: t = 400ns(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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