BU408D PDF and Equivalents Search

 ..1. Size:213K  inchange semiconductor

 bu408d.pdf

isc Silicon NPN Power Transistor BU408D DESCRIPTION High Voltage V = 400V(Min) CEV Fast Switching Speed- t = 0.5 s(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIM... See More ⇒

 9.1. Size:45K  fairchild semi

 bu406 bu406h bu408 bu406 bu408.pdf

BU406/406H/408 High Voltage Switching Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Co... See More ⇒

 9.2. Size:61K  samsung

 bu406 bu406 bu406h bu408 sam.pdf

BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TO-220 USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current ... See More ⇒

 9.3. Size:212K  inchange semiconductor

 bu408.pdf

isc Silicon NPN Power Transistor BU408 DESCRIPTION High Voltage V = 400V(Min) CEV Fast Switching Speed- t = 400ns(Max) f Low Saturation Voltage- V = 1.0V(Max)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection output stages of TV s and CRT s ABSOLUTE MAXIMUM... See More ⇒