BU4508DX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU4508DX

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 12

Encapsulados: SOT399

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BU4508DX datasheet

 ..1. Size:44K  philips
 bu4508dx 2.pdf pdf_icon

BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

 7.1. Size:43K  philips
 bu4508df 2.pdf pdf_icon

BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

 7.2. Size:44K  philips
 bu4508dz 2.pdf pdf_icon

BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collecto

 7.3. Size:258K  inchange semiconductor
 bu4508dz.pdf pdf_icon

BU4508DX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4508DZ DESCRIPTION High Voltage- High Switching Speed Built-in Damer Diode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Coll

MOSTRAR MÁS

Otros transistores... BU426A, BU426AF, BU426F, BU433, BU4508AF, BU4508AX, BU4508AZ, BU4508DF, D882, BU500, BU505, BU505D, BU505DF, BU505F, BU506, BU506D, BU506DF