All Transistors. BU4508DX Datasheet

 

BU4508DX Datasheet, Equivalent, Cross Reference Search

Type Designator: BU4508DX

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: SOT399

BU4508DX Transistor Equivalent Substitute - Cross-Reference Search

 

BU4508DX Datasheet (PDF)

1.1. bu4508dx 2.pdf Size:44K _philips

BU4508DX
BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and c

3.1. bu4508dz 2.pdf Size:44K _philips

BU4508DX
BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector c

3.2. bu4508df 2.pdf Size:43K _philips

BU4508DX
BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and c

 3.3. bu4508df.pdf Size:83K _inchange_semiconductor

BU4508DX
BU4508DX

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU4508DF DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDI

3.4. bu4508dz.pdf Size:258K _inchange_semiconductor

BU4508DX
BU4508DX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4508DZ DESCRIPTION ·High Voltage- ·High Switching Speed ·Built-in Damer Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top