All Transistors. BU4508DX Datasheet

 

BU4508DX Datasheet and Replacement


   Type Designator: BU4508DX
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: SOT399
 

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BU4508DX Datasheet (PDF)

 ..1. Size:44K  philips
bu4508dx 2.pdf pdf_icon

BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an

 7.1. Size:43K  philips
bu4508df 2.pdf pdf_icon

BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DF GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an

 7.2. Size:44K  philips
bu4508dz 2.pdf pdf_icon

BU4508DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4508DZ GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.Features exceptional tolerance to base drive and collecto

 7.3. Size:258K  inchange semiconductor
bu4508dz.pdf pdf_icon

BU4508DX

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4508DZ DESCRIPTION High Voltage- High Switching Speed Built-in Damer Diode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Coll

Datasheet: BU426A , BU426AF , BU426F , BU433 , BU4508AF , BU4508AX , BU4508AZ , BU4508DF , A1941 , BU500 , BU505 , BU505D , BU505DF , BU505F , BU506 , BU506D , BU506DF .

History: GES2484 | 2SB1121T | 2SC5778 | K2112B | MMCM2369 | SFT221 | KSC2690O

Keywords - BU4508DX transistor datasheet

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