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BU506DF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU506DF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO220F
 

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BU506DF Datasheet (PDF)

 ..1. Size:69K  philips
bu506df.pdf pdf_icon

BU506DF

DISCRETE SEMICONDUCTORSDATA SHEETBU506F; BU506DFSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU506F; BU506DFDESCRIPTIONHigh-voltage, high-speed switchingNPN power transistor in a SOT186package. The B

 ..2. Size:214K  inchange semiconductor
bu506df.pdf pdf_icon

BU506DF

isc Silicon NPN Power Transistor BU506DFDESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in Integrated Efficiency DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 8.1. Size:212K  inchange semiconductor
bu506d.pdf pdf_icon

BU506DF

isc Silicon NPN Power Transistor BU506DDESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

 9.1. Size:65K  philips
bu506.pdf pdf_icon

BU506DF

DISCRETE SEMICONDUCTORSDATA SHEETBU506; BU506DSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU506; BU506DDESCRIPTIONHigh-voltage, high-speed, switchingNPN power transistor in a TO-220ABpackage. The B

Otros transistores... BU4508DX , BU500 , BU505 , BU505D , BU505DF , BU505F , BU506 , BU506D , 2SC2073 , BU506F , BU508 , BU508A , BU508AF , BU508AFI , BU508AT , BU508AXI , BU508D .

History: PBSS305PZ | 2SC3521 | BF395C | P210V | 2SB403

 

 
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