BU506DF Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU506DF

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO220F

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BU506DF datasheet

 ..1. Size:69K  philips
bu506df.pdf pdf_icon

BU506DF

DISCRETE SEMICONDUCTORS DATA SHEET BU506F; BU506DF Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The B

 ..2. Size:214K  inchange semiconductor
bu506df.pdf pdf_icon

BU506DF

isc Silicon NPN Power Transistor BU506DF DESCRIPTION High Voltage High Switching Speed Built-in Integrated Efficiency Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.1. Size:212K  inchange semiconductor
bu506d.pdf pdf_icon

BU506DF

isc Silicon NPN Power Transistor BU506D DESCRIPTION High Voltage High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

 9.1. Size:65K  philips
bu506.pdf pdf_icon

BU506DF

DISCRETE SEMICONDUCTORS DATA SHEET BU506; BU506D Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The B

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