BU506DF. Аналоги и основные параметры

Наименование производителя: BU506DF

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 5

Корпус транзистора: TO220F

 Аналоги (замена) для BU506DF

- подборⓘ биполярного транзистора по параметрам

 

BU506DF даташит

 ..1. Size:69K  philips
 bu506df.pdf pdf_icon

BU506DF

DISCRETE SEMICONDUCTORS DATA SHEET BU506F; BU506DF Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The B

 ..2. Size:214K  inchange semiconductor
 bu506df.pdf pdf_icon

BU506DF

isc Silicon NPN Power Transistor BU506DF DESCRIPTION High Voltage High Switching Speed Built-in Integrated Efficiency Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.1. Size:212K  inchange semiconductor
 bu506d.pdf pdf_icon

BU506DF

isc Silicon NPN Power Transistor BU506D DESCRIPTION High Voltage High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

 9.1. Size:65K  philips
 bu506.pdf pdf_icon

BU506DF

DISCRETE SEMICONDUCTORS DATA SHEET BU506; BU506D Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The B

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BU4508DX, BU500, BU505, BU505D, BU505DF, BU505F, BU506, BU506D, 2SD718, BU506F, BU508, BU508A, BU508AF, BU508AFI, BU508AT, BU508AXI, BU508D