Справочник транзисторов. BU506DF

 

Биполярный транзистор BU506DF Даташит. Аналоги


   Наименование производителя: BU506DF
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 5
   Корпус транзистора: TO220F
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BU506DF Datasheet (PDF)

 ..1. Size:69K  philips
bu506df.pdfpdf_icon

BU506DF

DISCRETE SEMICONDUCTORSDATA SHEETBU506F; BU506DFSilicon diffused power transistorsProduct specification 1997 Aug 14Supersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU506F; BU506DFDESCRIPTIONHigh-voltage, high-speed switchingNPN power transistor in a SOT186package. The B

 ..2. Size:214K  inchange semiconductor
bu506df.pdfpdf_icon

BU506DF

isc Silicon NPN Power Transistor BU506DFDESCRIPTIONHigh VoltageHigh Switching SpeedBuilt-in Integrated Efficiency DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 8.1. Size:212K  inchange semiconductor
bu506d.pdfpdf_icon

BU506DF

isc Silicon NPN Power Transistor BU506DDESCRIPTIONHigh VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers and in line-operated switch-mode applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

 9.1. Size:65K  philips
bu506.pdfpdf_icon

BU506DF

DISCRETE SEMICONDUCTORSDATA SHEETBU506; BU506DSilicon diffused power transistors1997 Aug 13Product specificationSupersedes data of December 1991File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BU506; BU506DDESCRIPTIONHigh-voltage, high-speed, switchingNPN power transistor in a TO-220ABpackage. The B

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: MJ13334 | BSC1016B | BTD882ST3 | 2SD1074 | ESM2894 | BU931ZP | BF460EA

 

 
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