BU506DF Specs and Replacement

Type Designator: BU506DF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO220F

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BU506DF datasheet

 ..1. Size:69K  philips

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BU506DF

DISCRETE SEMICONDUCTORS DATA SHEET BU506F; BU506DF Silicon diffused power transistors Product specification 1997 Aug 14 Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF DESCRIPTION High-voltage, high-speed switching NPN power transistor in a SOT186 package. The B... See More ⇒

 ..2. Size:214K  inchange semiconductor

bu506df.pdf pdf_icon

BU506DF

isc Silicon NPN Power Transistor BU506DF DESCRIPTION High Voltage High Switching Speed Built-in Integrated Efficiency Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

 8.1. Size:212K  inchange semiconductor

bu506d.pdf pdf_icon

BU506DF

isc Silicon NPN Power Transistor BU506D DESCRIPTION High Voltage High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒

 9.1. Size:65K  philips

bu506.pdf pdf_icon

BU506DF

DISCRETE SEMICONDUCTORS DATA SHEET BU506; BU506D Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of December 1991 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The B... See More ⇒

Detailed specifications: BU4508DX, BU500, BU505, BU505D, BU505DF, BU505F, BU506, BU506D, 2SD718, BU506F, BU508, BU508A, BU508AF, BU508AFI, BU508AT, BU508AXI, BU508D

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