BU508 Todos los transistores

 

BU508 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU508
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 7 MHz
   Capacitancia de salida (Cc): 125 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TOP3

 Búsqueda de reemplazo de transistor bipolar BU508

 

BU508 Datasheet (PDF)

 ..1. Size:215K  inchange semiconductor
bu508.pdf

BU508 BU508

isc Silicon NPN Power Transistor BU508DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 125W@T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

 0.1. Size:45K  philips
bu508df.pdf

BU508 BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiencydiode, primarily for use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collec

 0.2. Size:48K  philips
bu508af 2.pdf

BU508 BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use inhorizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VB

 0.3. Size:46K  philips
bu508dx.pdf

BU508 BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiencydiode, primarily for use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collec

 0.4. Size:50K  philips
bu508ax.pdf

BU508 BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use inhorizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VB

 0.5. Size:58K  philips
bu508dw.pdf

BU508 BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarilyfor use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter vo

 0.6. Size:61K  philips
bu508aw.pdf

BU508 BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflectioncircuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 1500

 0.7. Size:80K  st
bu208d bu508d bu508dfi.pdf

BU508 BU508

BU208DBU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS BU208D AND BU508DFI ARE STMPREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGETO-3(U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE1 NPN TRANSISTOR WITH INTEGRATED2FREEWHEELING DIODEAPPLICATIONS: HORIZONTAL DEFLECTION FOR COLOURTV33DESCRIPTION221 1T

 0.8. Size:245K  st
bu208a bu508a bu508afi.pdf

BU508 BU508

BU208ABU508A/BU508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L.TO-3COMPLIANT) FOR EASY MOUNTING1APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOURTV DESCRIPTION The BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technolo

 0.9. Size:91K  st
bu508a.pdf

BU508 BU508

BU208A/508A/508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)TO-3 JEDEC TO-3 METAL CASE.1APPLICATIONS:2 HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTIONThe BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technology for c

 0.10. Size:236K  st
bu208a bu508a.pdf

BU508 BU508

BU208ABU508A/BU508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L.TO-3COMPLIANT) FOR EASY MOUNTING1APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOURTV DESCRIPTION The BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technolo

 0.11. Size:414K  st
bu508dfi.pdf

BU508 BU508

BU508DFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATEDFREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGAPPLICATIONS: 3 HORIZONTAL DEFLECTION FOR COLOUR2TV UP TO 25"1DESCRIPTION ISOWATT218The BU508DFI is manufactured using

 0.12. Size:211K  st
bu508af.pdf

BU508 BU508

BU508AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tight hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pa

 0.13. Size:75K  st
bu208a bu508a .pdf

BU508 BU508

BU208ABU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)TO-3 JEDEC TO-3 METAL CASE.1APPLICATIONS:2 HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTIONThe BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technology f

 0.14. Size:211K  st
bu508aw.pdf

BU508 BU508

BU508AWHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement3 Tight hFE range at operating collector current21 High ruggedness TO-247 semi-insulated power packageT

 0.15. Size:96K  st
bu208d bu508d.pdf

BU508 BU508

BU208D/508D/508DFIHIGH VOLTAGE FASTSWITCHING NPNPOWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)TO-3 JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED1FREEWHEELING DIODE2APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTION33The BU208D, BU508D and BU508DFI are22

 0.16. Size:47K  fairchild semi
bu508af.pdf

BU508 BU508

BU508AF TV Horizontal Output ApplicationsTO-3PF11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 1

 0.17. Size:78K  utc
bu508afi.pdf

BU508 BU508

UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TO-3PML TRANSISTOR 1. BASE2. COLLECTOR3. EMITTERDESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers.1 2 3Features * TV color horizontal deflection. * With TO-3P

 0.18. Size:228K  comset
bu508df.pdf

BU508 BU508

NPN BU508DFSILICON DIFFUSED POWER TRANSISTORSSILICON DIFFUSED POWER TRANSISTORSThe BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode forthe BU508DF).They are a high voltage, high speed switching and they are intended for use in horizontal deflexioncircuits of colour television receivers.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value U

 0.19. Size:264K  cdil
bu508a.pdf

BU508 BU508

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508ATO- 3PN Non IsolatedPlastic PackageColor TV Horizontal Output Application (No Damper Diode)ABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Specified Otherwise )DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 1500 VCollector -Emitter V

 0.20. Size:118K  cdil
bu508at.pdf

BU508 BU508

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR POWER TRANSISTOR BU508ATTO-220Plastic PackageHigh Voltage, High-Speed Switching TransistorIntended for use in Horizontal Deflection Circuits of Colour TelevisionsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCES 1500 VVCEO Collector

 0.21. Size:85K  cdil
bu508f af df.pdf

BU508 BU508

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN POWER TRANSISTORS BU508F, BU508AF,BU508DFTO- 3P Fully IsolatedPlastic PackageBCEFast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TVABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCES 1500 VCollector -Emitt

 0.22. Size:261K  nell
bu508c bu508b.pdf

BU508 BU508

RoHS RoHS BU508 SeriesSEMICONDUCTORNell High Power ProductsHigh voltage NPN Power transistor8A, 1500VFEATURESCStable performance vs. operating temperature variationHigh ruggednessTigth hFE range at operating collector currentBCTO-3P and TO-247AB package which can be ETO-247AB TO-3PB installed to the heat sink with one screw(BU508C) (BU805B)(2) APPLICATI

 0.23. Size:1298K  cn sps
bu508at4tl.pdf

BU508 BU508

BU508AT4TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 125W@T = 25D CAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V = 0) 1500 VCES BEV Collector-Emitter Vo

 0.24. Size:426K  cn sptech
bu508a.pdf

BU508 BU508

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU508ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 125W@T = 25D CAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V = 0) 1500 V

 0.25. Size:122K  inchange semiconductor
bu508d.pdf

BU508 BU508

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508D DESCRIPTION With TO-3PN package High voltage Built-in damper diode APPLICATIONS For use in large screen colour deflection circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maxi

 0.26. Size:42K  inchange semiconductor
bu508df.pdf

BU508 BU508

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DF DESCRIPTION With TO-3PFa package High voltage,high speed With integrated efficiency diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER CONDIT

 0.27. Size:632K  inchange semiconductor
bu508a.pdf

BU508 BU508

 0.28. Size:215K  inchange semiconductor
bu508fi.pdf

BU508 BU508

isc Silicon NPN Power Transistor BU508FIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 0.29. Size:217K  inchange semiconductor
bu508dx.pdf

BU508 BU508

isc Silicon NPN Power Transistor BU508DXDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

 0.30. Size:216K  inchange semiconductor
bu508dfi.pdf

BU508 BU508

isc Silicon NPN Power Transistor BU508DFIDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

 0.31. Size:216K  inchange semiconductor
bu508ax.pdf

BU508 BU508

isc Silicon NPN Power Transistor BU508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 0.32. Size:214K  inchange semiconductor
bu508dw.pdf

BU508 BU508

isc Silicon NPN Power Transistor BU508DWDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

 0.33. Size:211K  inchange semiconductor
bu508at.pdf

BU508 BU508

isc Silicon NPN Power Transistor BU508ATDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 100W@T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 0.34. Size:87K  inchange semiconductor
bu508a-m.pdf

BU508 BU508

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU508A-M DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) High Power Dissipation- : PD= 100W@TC= 25 APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0)

 0.35. Size:134K  inchange semiconductor
bu508af.pdf

BU508 BU508

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 0.36. Size:214K  inchange semiconductor
bu508afi.pdf

BU508 BU508

isc Silicon NPN Power Transistor BU508AFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 0.37. Size:214K  inchange semiconductor
bu508aw.pdf

BU508 BU508

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU508AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 0.38. Size:218K  inchange semiconductor
bu508dr.pdf

BU508 BU508

isc Silicon NPN Power Transistor BU508DRDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP122 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
Back to Top

 


BU508
  BU508
  BU508
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
Back to Top