Справочник транзисторов. BU508

 

Биполярный транзистор BU508 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: BU508

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 125 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 7 MHz

Ёмкость коллекторного перехода (Cc): 125 pf

Статический коэффициент передачи тока (hfe): 10

Корпус транзистора: TOP3

Аналоги (замена) для BU508

 

 

BU508 Datasheet (PDF)

1.1. bu508c bu508b.pdf Size:261K _update

BU508
BU508

RoHS RoHS BU508 Series SEMICONDUCTOR Nell High Power Products High voltage NPN Power transistor 8A, 1500V FEATURES C Stable performance vs. operating temperature variation High ruggedness Tigth hFE range at operating collector current B C TO-3P and TO-247AB package which can be E TO-247AB TO-3PB installed to the heat sink with one screw (BU508C) (BU805B) (2) APPLICATI

1.2. 2sc3882s 2sc4368 2sc4369 2sc4371 2sc4377 2sd1351a 2sd2058a bf599 bfq31 bfs20 bu508a bu806 buv48a buv48c kta1242 kta940.pdf Size:495K _update_bjt

BU508
BU508



 1.3. bu508ax.pdf Size:50K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE =

1.4. bu508dw.pdf Size:58K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter volta

 1.5. bu508aw.pdf Size:61K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500 V

1.6. bu508dx.pdf Size:46K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector

1.7. bu508af 2.pdf Size:48K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE =

1.8. bu508df.pdf Size:45K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector

1.9. bu208d bu508d.pdf Size:96K _st

BU508
BU508

BU208D/508D/508DFI HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) TO-3 JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED 1 FREEWHEELING DIODE 2 APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION 3 3 The BU208D, BU508D and BU508DFI are 2 2 ma

1.10. bu508dfi.pdf Size:414K _st

BU508
BU508

BU508DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING APPLICATIONS: 3 HORIZONTAL DEFLECTION FOR COLOUR 2 TV UP TO 25" 1 DESCRIPTION ISOWATT218 The BU508DFI is manufactured using Mul

1.11. bu508af.pdf Size:216K _st

BU508
BU508

BU508AF High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement 3 2 Tight hFE range at operating collector current 1 High ruggedness ISOWATT218FX Fully insulated power package U.L. compliant

1.12. bu208a bu508a bu508afi.pdf Size:245K _st

BU508
BU508

BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. TO-3 COMPLIANT) FOR EASY MOUNTING 1 APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technology f

1.13. bu208d bu508d bu508dfi.pdf Size:80K _st

BU508
BU508

BU208D BU508D/BU508DFI ? HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS BU208D AND BU508DFI ARE STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE TO-3 (U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE 1 NPN TRANSISTOR WITH INTEGRATED 2 FREEWHEELING DIODE APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV 3 3 DESCRIPTION 2 2 1 1 The BU

1.14. bu508aw.pdf Size:216K _st

BU508
BU508

BU508AW High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement 3 Tight hFE range at operating collector current 2 1 High ruggedness TO-247 semi-insulated power package TO-247 Applications

1.15. bu208a bu508a.pdf Size:236K _st

BU508
BU508

BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. TO-3 COMPLIANT) FOR EASY MOUNTING 1 APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technology f

1.16. bu508a.pdf Size:91K _st

BU508
BU508

BU208A/508A/508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) TO-3 JEDEC TO-3 METAL CASE. 1 APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technology for cost

1.17. bu508af.pdf Size:47K _fairchild_semi

BU508
BU508

BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 15 A

1.18. bu508afi.pdf Size:78K _utc

BU508
BU508

UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TO-3PML TRANSISTOR 1. BASE 2. COLLECTOR 3. EMITTER DESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers. 1 2 3 Features * TV color horizontal deflection. * With TO-3PML

1.19. bu508df.pdf Size:228K _comset

BU508
BU508

NPN BU508DF SILICON DIFFUSED POWER TRANSISTORS SILICON DIFFUSED POWER TRANSISTORS The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for the BU508DF). They are a high voltage, high speed switching and they are intended for use in horizontal deflexion circuits of colour television receivers. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit

1.20. bu508at.pdf Size:118K _cdil

BU508
BU508

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR POWER TRANSISTOR BU508AT TO-220 Plastic Package High Voltage, High-Speed Switching Transistor Intended for use in Horizontal Deflection Circuits of Colour Televisions ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCES 1500 V VCEO Collector Em

1.21. bu508f af df.pdf Size:85K _cdil

BU508
BU508

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCES 1500 V Collector -Emitter

1.22. bu508a.pdf Size:264K _cdil

BU508
BU508

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508A TO- 3PN Non Isolated Plastic Package Color TV Horizontal Output Application (No Damper Diode) ABSOLUTE MAXIMUM RATINGS (Ta=25?C Unless Specified Otherwise ) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 1500 V Collector -Emitter Volta

1.23. bu508dr.pdf Size:218K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508DR DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V

1.24. bu508dfi.pdf Size:216K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508DFI DESCRIPTION ·High Voltage-V = 1500V(Min.) CES ·Collector Current- I = 8.0A C ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-

1.25. bu508af.pdf Size:211K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508AF DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 700V (Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V

1.26. bu508at.pdf Size:211K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508AT DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 700V (Min) CEO(SUS) ·High Power Dissipation- : P = 100W@T = 25℃ D C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

1.27. bu508ax.pdf Size:216K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508AX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 700V (Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V

1.28. bu508dw.pdf Size:214K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508DW DESCRIPTION ·High Voltage-V = 1500V(Min.) CES ·Collector Current- I = 8.0A C ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collect

1.29. bu508fi.pdf Size:215K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508FI DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 700V (Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V

1.30. bu508d.pdf Size:122K _inchange_semiconductor

BU508
BU508

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508D DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage Ў¤ Built-in damper diode APPLICATIONS Ў¤ For use in large screen colour deflection circuits. PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum rati

1.31. bu508aw.pdf Size:214K _inchange_semiconductor

BU508
BU508

INCHANGE Semiconductor isc Silicon NPN Power Transistor BU508AW DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 700V (Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL

1.32. bu508a.pdf Size:215K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 700V (Min) CEO(SUS) ·High Power Dissipation- : P = 125W@T = 25℃ D C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

1.33. bu508.pdf Size:215K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 700V (Min) CEO(SUS) ·High Power Dissipation- : P = 125W@T = 25℃ D C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER V

1.34. bu508afi.pdf Size:214K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508AFI DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 700V (Min) CEO(SUS) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V

1.35. bu508dx.pdf Size:217K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508DX DESCRIPTION ·High Voltage-V = 1500V(Min.) CES ·Collector Current- I = 8.0A C ·Built-in Integrated Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collect

1.36. bu508a-m.pdf Size:87K _inchange_semiconductor

BU508
BU508

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU508A-M DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Power Dissipation- : PD= 100W@TC= 25? APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V

1.37. bu508df.pdf Size:42K _inchange_semiconductor

BU508
BU508

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DF DESCRIPTION Ў¤ With TO-3PFa package Ў¤ High voltage,high speed Ў¤ With integrated efficiency diode APPLICATIONS Ў¤ For use in horizontal deflection circuits of colour TV receivers PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25Ўж ) SYMBOL VCBO VCEO VEBO

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