All Transistors. BU508 Datasheet

 

BU508 Datasheet, Equivalent, Cross Reference Search

Type Designator: BU508

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 700 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 7 MHz

Collector Capacitance (Cc): 125 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TOP3

BU508 Transistor Equivalent Substitute - Cross-Reference Search

 

BU508 Datasheet (PDF)

0.1. bu508ax.pdf Size:50K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use inhorizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VB

0.2. bu508dw.pdf Size:58K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarilyfor use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter vo

 0.3. bu508aw.pdf Size:61K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflectioncircuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 1500

0.4. bu508dx.pdf Size:46K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope with integrated efficiencydiode, primarily for use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collec

 0.5. bu508af 2.pdf Size:48K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use inhorizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VB

0.6. bu508df.pdf Size:45K _philips

BU508
BU508

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiencydiode, primarily for use in horizontal deflection circuits of colour television receivers.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collec

0.7. bu208d bu508d.pdf Size:96K _st

BU508
BU508

BU208D/508D/508DFIHIGH VOLTAGE FASTSWITCHING NPNPOWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)TO-3 JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED1FREEWHEELING DIODE2APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTION33The BU208D, BU508D and BU508DFI are22

0.8. bu508dfi.pdf Size:414K _st

BU508
BU508

BU508DFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH VOLTAGE CAPABILITY ( > 1500 V ) NPN TRANSISTOR WITH INTEGRATEDFREEWHEELING DIODE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGAPPLICATIONS: 3 HORIZONTAL DEFLECTION FOR COLOUR2TV UP TO 25"1DESCRIPTION ISOWATT218The BU508DFI is manufactured using

0.9. bu508af.pdf Size:216K _st

BU508
BU508

BU508AFHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement32 Tight hFE range at operating collector current1 High ruggednessISOWATT218FX Fully insulated power pa

0.10. bu208a bu508a bu508afi.pdf Size:245K _st

BU508
BU508

BU208ABU508A/BU508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L.TO-3COMPLIANT) FOR EASY MOUNTING1APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOURTV DESCRIPTION The BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technolo

0.11. bu208a bu508a .pdf Size:75K _st

BU508
BU508

BU208ABU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)TO-3 JEDEC TO-3 METAL CASE.1APPLICATIONS:2 HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTIONThe BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technology f

0.12. bu208d bu508d bu508dfi.pdf Size:80K _st

BU508
BU508

BU208DBU508D/BU508DFI HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS BU208D AND BU508DFI ARE STMPREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGETO-3(U.L. FILE # E81734 (N) JEDEC TO-3 METAL CASE1 NPN TRANSISTOR WITH INTEGRATED2FREEWHEELING DIODEAPPLICATIONS: HORIZONTAL DEFLECTION FOR COLOURTV33DESCRIPTION221 1T

0.13. bu508aw.pdf Size:216K _st

BU508
BU508

BU508AWHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement3 Tight hFE range at operating collector current21 High ruggedness TO-247 semi-insulated power packageT

0.14. bu208a bu508a.pdf Size:236K _st

BU508
BU508

BU208ABU508A/BU508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L.TO-3COMPLIANT) FOR EASY MOUNTING1APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR COLOURTV DESCRIPTION The BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technolo

0.15. bu508a.pdf Size:91K _st

BU508
BU508

BU208A/508A/508AFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE(U.L. FILE # E81734 (N)TO-3 JEDEC TO-3 METAL CASE.1APPLICATIONS:2 HORIZONTAL DEFLECTION FOR COLOURTVDESCRIPTIONThe BU208A, BU508A and BU508AFI aremanufactured using Multiepitaxial Mesa33technology for c

0.16. bu508af.pdf Size:47K _fairchild_semi

BU508
BU508

BU508AF TV Horizontal Output ApplicationsTO-3PF11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 1

0.17. bu508afi.pdf Size:78K _utc

BU508
BU508

UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TO-3PML TRANSISTOR 1. BASE2. COLLECTOR3. EMITTERDESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers.1 2 3Features * TV color horizontal deflection. * With TO-3P

0.18. bu508df.pdf Size:228K _comset

BU508
BU508

NPN BU508DFSILICON DIFFUSED POWER TRANSISTORSSILICON DIFFUSED POWER TRANSISTORSThe BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode forthe BU508DF).They are a high voltage, high speed switching and they are intended for use in horizontal deflexioncircuits of colour television receivers.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value U

0.19. bu508at.pdf Size:118K _cdil

BU508
BU508

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR POWER TRANSISTOR BU508ATTO-220Plastic PackageHigh Voltage, High-Speed Switching TransistorIntended for use in Horizontal Deflection Circuits of Colour TelevisionsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCES 1500 VVCEO Collector

0.20. bu508f af df.pdf Size:85K _cdil

BU508
BU508

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN POWER TRANSISTORS BU508F, BU508AF,BU508DFTO- 3P Fully IsolatedPlastic PackageBCEFast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TVABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector -Emitter Voltage VCES 1500 VCollector -Emitt

0.21. bu508a.pdf Size:264K _cdil

BU508
BU508

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508ATO- 3PN Non IsolatedPlastic PackageColor TV Horizontal Output Application (No Damper Diode)ABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Specified Otherwise )DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 1500 VCollector -Emitter V

0.22. bu508c bu508b.pdf Size:261K _nell

BU508
BU508

RoHS RoHS BU508 SeriesSEMICONDUCTORNell High Power ProductsHigh voltage NPN Power transistor8A, 1500VFEATURESCStable performance vs. operating temperature variationHigh ruggednessTigth hFE range at operating collector currentBCTO-3P and TO-247AB package which can be ETO-247AB TO-3PB installed to the heat sink with one screw(BU508C) (BU805B)(2) APPLICATI

0.23. bu508dr.pdf Size:218K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508DRDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

0.24. bu508dfi.pdf Size:216K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508DFIDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

0.25. bu508af.pdf Size:211K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

0.26. bu508at.pdf Size:211K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508ATDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 100W@T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

0.27. bu508ax.pdf Size:216K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

0.28. bu508dw.pdf Size:214K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508DWDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

0.29. bu508fi.pdf Size:215K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508FIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

0.30. bu508d.pdf Size:122K _inchange_semiconductor

BU508
BU508

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508D DESCRIPTION With TO-3PN package High voltage Built-in damper diode APPLICATIONS For use in large screen colour deflection circuits. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maxi

0.31. bu508aw.pdf Size:214K _inchange_semiconductor

BU508
BU508

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU508AWDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

0.32. bu508a.pdf Size:215K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 125W@T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

0.33. bu508.pdf Size:215K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Power Dissipation-: P = 125W@T = 25D CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

0.34. bu508afi.pdf Size:214K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508AFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

0.35. bu508dx.pdf Size:217K _inchange_semiconductor

BU508
BU508

isc Silicon NPN Power Transistor BU508DXDESCRIPTIONHigh Voltage-V = 1500V(Min.)CESCollector Current- I = 8.0ACBuilt-in Integrated DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in large screen color deflection circuits .ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

0.36. bu508a-m.pdf Size:87K _inchange_semiconductor

BU508
BU508

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU508A-M DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) High Power Dissipation- : PD= 100W@TC= 25 APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0)

0.37. bu508df.pdf Size:42K _inchange_semiconductor

BU508
BU508

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508DF DESCRIPTION With TO-3PFa package High voltage,high speed With integrated efficiency diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER CONDIT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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